Contact resistance instability in pentacene thin film transistors induced by ambient gases

S. D. Wang, T. Minari, T. Miyadera, K. Tsukagoshi, J. X. Tang

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

Top-contact pentacene thin film transistors show the strong susceptibility of the contact resistance to ambient gases. Moisture and oxygen lead to the increase and decrease in the contact resistance, respectively. The phenomenon is interpreted by the local conductivity change in the contact region induced by the adsorption/desorption of ambient gases. The present works suggest that the current injection in the pentacene thin film transistors is strongly correlated with the charge transport property in the contact region, where the contact resistance is mainly controlled by the charge trap states.

Original languageEnglish
Article number083309
JournalApplied Physics Letters
Volume94
Issue number8
DOIs
Publication statusPublished - 2009
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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