Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change

Y. Shuang, Y. Sutou, S. Hatayama, S. Shindo, Y. H. Song, D. Ando, J. Koike

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


Phase-change random access memory (PCRAM) is enabled by a large resistance contrast between amorphous and crystalline phases upon reversible switching between the two states. Thus, great efforts have been devoted to identifying potential phase-change materials (PCMs) with large electrical contrast to realize a more accurate reading operation. In contrast, although the truly dominant resistance in a scaled PCRAM cell is contact resistance, less attention has been paid toward the investigation of the contact property between PCMs and electrode metals. This study aims to propose a non-bulk-resistance-dominant PCRAM whose resistance is modulated only by contact. The contact-resistance-dominated PCM exploited here is N-doped Cr2Ge2Te6 (NCrGT), which exhibits almost no electrical resistivity difference between the two phases but exhibits a typical switching behavior involving a three-order-of-magnitude SET/RESET resistance ratio owing to its large contact resistance contrast. The conduction mechanism was discussed on the basis of current-voltage characteristics of the interface between the NCrGT and the W electrode.

Original languageEnglish
Article number183504
JournalApplied Physics Letters
Issue number18
Publication statusPublished - 2018 Apr 30

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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