Contact resistance and megahertz operation of aggressively scaled organic transistors

Frederik Ante, Daniel Kälblein, Tarek Zaki, Ute Zschieschang, Kazuo Takimiya, Masaaki Ikeda, Tsuyoshi Sekitani, Takao Someya, Joachim N. Burghartz, Klaus Kern, Hagen Klauk

Research output: Contribution to journalArticle

170 Citations (Scopus)

Abstract

Bottom-gate, top-contact organic thin-film transistors (TFTs) with excellent static characteristics (on/off ratio: 10 7; intrinsic mobility: 3 cm 2 (V s) -1) and fast unipolar ring oscillators (signal delay as short as 230 ns per stage) are fabricated. The significant contribution of the transfer length to the relation between channel length, contact length, contact resistance, effective mobility, and cutoff frequency of the TFTs is theoretically and experimentally analyzed.

Original languageEnglish
Pages (from-to)73-79
Number of pages7
JournalSmall
Volume8
Issue number1
DOIs
Publication statusPublished - 2012 Jan 9
Externally publishedYes

Keywords

  • contact length
  • contact resistance
  • cutoff frequency
  • organic thin-film transistors

ASJC Scopus subject areas

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)

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  • Cite this

    Ante, F., Kälblein, D., Zaki, T., Zschieschang, U., Takimiya, K., Ikeda, M., Sekitani, T., Someya, T., Burghartz, J. N., Kern, K., & Klauk, H. (2012). Contact resistance and megahertz operation of aggressively scaled organic transistors. Small, 8(1), 73-79. https://doi.org/10.1002/smll.201101677