Contact-metal dependent current injection in pentacene thin-film transistors

S. D. Wang; T. Minari; T. Miyadera; K. Tsukagoshi; Y. Aoyagi

doi:10.1063/1.2813640

Contact-metal dependent current injection in pentacene thin-film transistors

S. D. Wang, T. Minari, T. Miyadera, K. Tsukagoshi, Y. Aoyagi

Research output: Contribution to journal › Article › peer-review

140 Citations (Scopus)

Abstract

Contact-metal dependent current injection in top-contact pentacene thin-film transistors is analyzed, and the local mobility in the contact region was found to follow the Meyer-Neldel rule. An exponential trap distribution, rather than the metal/organic hole injection barrier, is proposed to be the dominant factor of the contact resistance in pentacene thin-film transistors. The variable temperature measurements revealed a much narrower trap distribution in the copper contact compared with the corresponding gold contact, and this is the origin of the smaller contact resistance for copper despite a lower work function.

Original language	English
Article number	203508
Journal	Applied Physics Letters
Volume	91
Issue number	20
DOIs	https://doi.org/10.1063/1.2813640
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2813640

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title = "Contact-metal dependent current injection in pentacene thin-film transistors",

abstract = "Contact-metal dependent current injection in top-contact pentacene thin-film transistors is analyzed, and the local mobility in the contact region was found to follow the Meyer-Neldel rule. An exponential trap distribution, rather than the metal/organic hole injection barrier, is proposed to be the dominant factor of the contact resistance in pentacene thin-film transistors. The variable temperature measurements revealed a much narrower trap distribution in the copper contact compared with the corresponding gold contact, and this is the origin of the smaller contact resistance for copper despite a lower work function.",

author = "Wang, {S. D.} and T. Minari and T. Miyadera and K. Tsukagoshi and Y. Aoyagi",

note = "Funding Information: This work was supported in part by the Grant-In-Aid for Scientific Research (Nos. 16GS50219, 17069004, and 18201028) from the Ministry of Education, Culture, Sport, Science and Technology of Japan.",

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doi = "10.1063/1.2813640",

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journal = "Applied Physics Letters",

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T1 - Contact-metal dependent current injection in pentacene thin-film transistors

AU - Wang, S. D.

AU - Minari, T.

AU - Miyadera, T.

AU - Tsukagoshi, K.

AU - Aoyagi, Y.

N1 - Funding Information: This work was supported in part by the Grant-In-Aid for Scientific Research (Nos. 16GS50219, 17069004, and 18201028) from the Ministry of Education, Culture, Sport, Science and Technology of Japan.

PY - 2007

Y1 - 2007

N2 - Contact-metal dependent current injection in top-contact pentacene thin-film transistors is analyzed, and the local mobility in the contact region was found to follow the Meyer-Neldel rule. An exponential trap distribution, rather than the metal/organic hole injection barrier, is proposed to be the dominant factor of the contact resistance in pentacene thin-film transistors. The variable temperature measurements revealed a much narrower trap distribution in the copper contact compared with the corresponding gold contact, and this is the origin of the smaller contact resistance for copper despite a lower work function.

AB - Contact-metal dependent current injection in top-contact pentacene thin-film transistors is analyzed, and the local mobility in the contact region was found to follow the Meyer-Neldel rule. An exponential trap distribution, rather than the metal/organic hole injection barrier, is proposed to be the dominant factor of the contact resistance in pentacene thin-film transistors. The variable temperature measurements revealed a much narrower trap distribution in the copper contact compared with the corresponding gold contact, and this is the origin of the smaller contact resistance for copper despite a lower work function.

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Contact-metal dependent current injection in pentacene thin-film transistors

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