Contact-metal dependent current injection in pentacene thin-film transistors

S. D. Wang, T. Minari, T. Miyadera, K. Tsukagoshi, Y. Aoyagi

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140 Citations (Scopus)


Contact-metal dependent current injection in top-contact pentacene thin-film transistors is analyzed, and the local mobility in the contact region was found to follow the Meyer-Neldel rule. An exponential trap distribution, rather than the metal/organic hole injection barrier, is proposed to be the dominant factor of the contact resistance in pentacene thin-film transistors. The variable temperature measurements revealed a much narrower trap distribution in the copper contact compared with the corresponding gold contact, and this is the origin of the smaller contact resistance for copper despite a lower work function.

Original languageEnglish
Article number203508
JournalApplied Physics Letters
Issue number20
Publication statusPublished - 2007
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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