Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold

Yi Chia Tsai, Blanka Magyari-Kope, Yiming Li, Seiji Samukawa, Yoshio Nishi, Simon M. Sze

Research output: Contribution to journalArticle

Abstract

High contact resistance keeps black phosphorus (BP) from fully wielding its excellent material property. Using first-principles calculations, we analyze the interfacial binding behavior and the impact of binding on the other layers of a trilayer BP. We found that the interfacial charge density and charge transfer of Scandium (Sc)-contacted trilayer BP are 2.67 and 3.29 times greater than Au-contacted trilayer BP, respectively. Moreover, the interfacial tunneling barrier height and width of Sc-contacted trilayer BP are 0 eV and 1.851 Å, which are significantly smaller than that of 5.1 eV and 2.447 Å observed in Au-contacted trilayer BP. All these facts suggest a strong bonding and efficient carrier transmission between Sc contact and trilayer BP substrate. Therefore, we conclude that the Sc electrode can lead to a superior performance that is consistent with the experiment.

Original languageEnglish
Article number8633379
Pages (from-to)322-328
Number of pages7
JournalIEEE Journal of the Electron Devices Society
Volume7
DOIs
Publication statusPublished - 2019 Jan 1

Keywords

  • Black phosphorus
  • DFT
  • contact
  • electron injection
  • first-principles calculation
  • gold
  • multilayer
  • scandium

ASJC Scopus subject areas

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold'. Together they form a unique fingerprint.

  • Cite this