Contact doping and ultrathin gate dielectrics for nanoscale organic thin-film transistors

Frederik Ante, Daniel Kälblein, Ute Zschieschang, Tobias W. Canzler, Ansgar Werner, Kazuo Takimiya, Masaaki Ikeda, Tsuyoshi Sekitani, Takao Someya, Hagen Klauk

Research output: Contribution to journalArticle

93 Citations (Scopus)

Abstract

To suppress undesirable short-channel effects in organic transistors with nanoscale lateral dimensions, aggressive gate-dielectric scaling (using an ultra-thin monolayer-based gate dielectric) and area-selective contact doping (using a strong organic dopant) are introduced into organic transistors with channel lengths and gate-to-contact overlaps of about 100 nm. These nanoscale organic transistors have off-state drain currents below 1 pA, on/off current ratios near 107, and clean linear and saturation characteristics.

Original languageEnglish
Pages (from-to)1186-1191
Number of pages6
JournalSmall
Volume7
Issue number9
DOIs
Publication statusPublished - 2011 May 9

Keywords

  • contact doping
  • contact resistance
  • organic thin-film transistors
  • transfer length
  • ultra-thin gate dielectrics

ASJC Scopus subject areas

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)

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  • Cite this

    Ante, F., Kälblein, D., Zschieschang, U., Canzler, T. W., Werner, A., Takimiya, K., Ikeda, M., Sekitani, T., Someya, T., & Klauk, H. (2011). Contact doping and ultrathin gate dielectrics for nanoscale organic thin-film transistors. Small, 7(9), 1186-1191. https://doi.org/10.1002/smll.201002254