TY - JOUR
T1 - Constriction of a lattice constant in an epitaxial magnesium oxide film deposited on a silicon substrate
AU - Kaneko, Satoru
AU - Tokumasu, Takashi
AU - Nakamaru, Yoshimi
AU - Kokubun, Chiemi
AU - Konda, Kayoko
AU - Yasui, Manabu
AU - Kurouchi, Masahito
AU - Can, Musa
AU - Shawuti, Shalima
AU - Sudo, Rieko
AU - Endo, Tamio
AU - Yasuhara, Shigeo
AU - Matsuda, Akifumi
AU - Yoshimoto, Mamoru
N1 - Funding Information:
The authors also thank Mr. Yoshitsugu Sato for special assistance with the PLD system. This research was supported in part by Grants-in-Aid for Scientific Research (KAKENHI) under the contract No.26420692, Japan Society for the Promotion of Science (JSPS), and the Amada Foundation AF-2017219.
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2019/2
Y1 - 2019/2
N2 - We demonstrated epitaxial growth of magnesium oxide (MgO) on a silicon (Si) substrate with cubic on cubic structure [MgO(001)//Si(001) and MgO(100)//Si(100)]. Epitaxial films were prepared using the pulsed laser deposition method, and with dependent on deposition conditions of oxygen partial pressure and substrate temperature, the lattice constants of MgO decreased along both the surface normal and in-plane directions. To support the facts of (1) constriction of lattice constants and (2) cubic on cubic growth, we show (1) optimal lattice constants with defects in the crystal structure, (2) domain mismatch between MgO and Si instead of lattice mismatch, and (3) stability of MgO crystals on the surface of the Si substrate.
AB - We demonstrated epitaxial growth of magnesium oxide (MgO) on a silicon (Si) substrate with cubic on cubic structure [MgO(001)//Si(001) and MgO(100)//Si(100)]. Epitaxial films were prepared using the pulsed laser deposition method, and with dependent on deposition conditions of oxygen partial pressure and substrate temperature, the lattice constants of MgO decreased along both the surface normal and in-plane directions. To support the facts of (1) constriction of lattice constants and (2) cubic on cubic growth, we show (1) optimal lattice constants with defects in the crystal structure, (2) domain mismatch between MgO and Si instead of lattice mismatch, and (3) stability of MgO crystals on the surface of the Si substrate.
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U2 - 10.7567/1347-4065/aaec11
DO - 10.7567/1347-4065/aaec11
M3 - Article
AN - SCOPUS:85062258381
VL - 58
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - SA
M1 - SAAD06
ER -