Considerations of thermodynamics on diamond formation by low pressure vapor synthesis

Toshiaki Ueda; Kushiro Mukai; Takashi Nakamura

Considerations of thermodynamics on diamond formation by low pressure vapor synthesis

Toshiaki Ueda, Kushiro Mukai, Takashi Nakamura

Institute of Multidisciplinary Research for Advanced Materials (IMRAM)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Diamonds were formed on the silicon substrate attached to the water-cooled copper or stainless steel block using an acetylene- oxygen combustion flame method for the range of the gas composition ration R(C₂H₂(vol%)/O₂(vol%)) between 1.1 and 2.4. Thermodynamic calculation of gaseous concentrations in the acetylene feather is consistent with the equilibrium state. The larger the vertical temperature gradient of silicon substrate, the smaller is the value of the gas composition ratio R in which diamond can form. It may be considered that the activated carbon species are rapidly quenched on the substrate surface due to the large vertical temperature gradient, which leads to the formation of diamond.

Original language	English
Title of host publication	First International Conference on Processing Materials for Properties
Publisher	Publ by Minerals, Metals & Materials Soc (TMS)
Pages	1153-1156
Number of pages	4
ISBN (Print)	0873392566
Publication status	Published - 1993 Dec 1
Event	Proceedings of the 1st International Conference on Processing Materials for Properties - Honolulu, HI, USA Duration: 1993 Nov 7 → 1993 Nov 10

Publication series

Name	First International Conference on Processing Materials for Properties

Other

Other	Proceedings of the 1st International Conference on Processing Materials for Properties
City	Honolulu, HI, USA
Period	93/11/7 → 93/11/10

ASJC Scopus subject areas

Engineering(all)

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Ueda, T., Mukai, K., & Nakamura, T. (1993). Considerations of thermodynamics on diamond formation by low pressure vapor synthesis. In First International Conference on Processing Materials for Properties (pp. 1153-1156). (First International Conference on Processing Materials for Properties). Publ by Minerals, Metals & Materials Soc (TMS).

Considerations of thermodynamics on diamond formation by low pressure vapor synthesis. / Ueda, Toshiaki; Mukai, Kushiro; Nakamura, Takashi.

First International Conference on Processing Materials for Properties. Publ by Minerals, Metals & Materials Soc (TMS), 1993. p. 1153-1156 (First International Conference on Processing Materials for Properties).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ueda, T, Mukai, K & Nakamura, T 1993, Considerations of thermodynamics on diamond formation by low pressure vapor synthesis. in First International Conference on Processing Materials for Properties. First International Conference on Processing Materials for Properties, Publ by Minerals, Metals & Materials Soc (TMS), pp. 1153-1156, Proceedings of the 1st International Conference on Processing Materials for Properties, Honolulu, HI, USA, 93/11/7.

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abstract = "Diamonds were formed on the silicon substrate attached to the water-cooled copper or stainless steel block using an acetylene- oxygen combustion flame method for the range of the gas composition ration R(C2H2(vol%)/O2(vol%)) between 1.1 and 2.4. Thermodynamic calculation of gaseous concentrations in the acetylene feather is consistent with the equilibrium state. The larger the vertical temperature gradient of silicon substrate, the smaller is the value of the gas composition ratio R in which diamond can form. It may be considered that the activated carbon species are rapidly quenched on the substrate surface due to the large vertical temperature gradient, which leads to the formation of diamond.",

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AB - Diamonds were formed on the silicon substrate attached to the water-cooled copper or stainless steel block using an acetylene- oxygen combustion flame method for the range of the gas composition ration R(C2H2(vol%)/O2(vol%)) between 1.1 and 2.4. Thermodynamic calculation of gaseous concentrations in the acetylene feather is consistent with the equilibrium state. The larger the vertical temperature gradient of silicon substrate, the smaller is the value of the gas composition ratio R in which diamond can form. It may be considered that the activated carbon species are rapidly quenched on the substrate surface due to the large vertical temperature gradient, which leads to the formation of diamond.

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