TY - GEN
T1 - Considerations of thermodynamics on diamond formation by low pressure vapor synthesis
AU - Ueda, Toshiaki
AU - Mukai, Kushiro
AU - Nakamura, Takashi
PY - 1993/12/1
Y1 - 1993/12/1
N2 - Diamonds were formed on the silicon substrate attached to the water-cooled copper or stainless steel block using an acetylene- oxygen combustion flame method for the range of the gas composition ration R(C2H2(vol%)/O2(vol%)) between 1.1 and 2.4. Thermodynamic calculation of gaseous concentrations in the acetylene feather is consistent with the equilibrium state. The larger the vertical temperature gradient of silicon substrate, the smaller is the value of the gas composition ratio R in which diamond can form. It may be considered that the activated carbon species are rapidly quenched on the substrate surface due to the large vertical temperature gradient, which leads to the formation of diamond.
AB - Diamonds were formed on the silicon substrate attached to the water-cooled copper or stainless steel block using an acetylene- oxygen combustion flame method for the range of the gas composition ration R(C2H2(vol%)/O2(vol%)) between 1.1 and 2.4. Thermodynamic calculation of gaseous concentrations in the acetylene feather is consistent with the equilibrium state. The larger the vertical temperature gradient of silicon substrate, the smaller is the value of the gas composition ratio R in which diamond can form. It may be considered that the activated carbon species are rapidly quenched on the substrate surface due to the large vertical temperature gradient, which leads to the formation of diamond.
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M3 - Conference contribution
AN - SCOPUS:0027874149
SN - 0873392566
T3 - First International Conference on Processing Materials for Properties
SP - 1153
EP - 1156
BT - First International Conference on Processing Materials for Properties
PB - Publ by Minerals, Metals & Materials Soc (TMS)
T2 - Proceedings of the 1st International Conference on Processing Materials for Properties
Y2 - 7 November 1993 through 10 November 1993
ER -