Confirmation of the "Atom pumping-Up mechanism" in Fe/Ta film for the fabrication of ferromagnetic nanobridges

M. Doi, Y. Abe, K. Miyake, H. N. Fuke, M. Takagishi, H. Iwasaki, M. Sahashi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

When the surface energy of bottom layer is lower than top layer, the atoms of bottom layer should be pumped up at the triple point of the grain boundary. This phenomenon should be useful for the fabrication of well-defined nanobridge. To confirm the Atom Pumping-Up mechanism for metal/metal thin films, Ta(2 nm) on epitaxial MgO(001)/Fe(001) films were prepared by the electron beam deposition method. The Pumping-Up mechanism was successfully confirmed by the Auger Electron Spectroscopy, the in situ Scanning Tunneling Microscopy, and the Transmission Electron Microscope observation after heat treatment of 400°C × 30 min. The size of the Fe bridges was 2-5 nm. Furthermore, the magnetic exchange coupling effect on the magnetization process through the ferromagnetic bridges between two Fe layers in MgO/Fe/Ta/Fe after Atom Pumping-Up shows a good agreement to the micromagnetics simulation result from the assumption of ferromagnetic bridges with the size of 1-4 nm.

Original languageEnglish
Pages (from-to)2851-2853
Number of pages3
JournalIEEE Transactions on Magnetics
Volume43
Issue number6
DOIs
Publication statusPublished - 2007 Jun 1

Keywords

  • Exchange coupling
  • Ferromagnetic nanobridge
  • Nano-oxide layer
  • Surface energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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