Confined multiexciton states of GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface

C. Watatani, K. Edamatsu, T. Itoh, H. Hayashi, S. Shimomura, S. Hiyamizu

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We have investigated the micro photoluminescence (micro-PL) spectra of a single GaAs/AlGaAs quantum dot (QD) grown on a (411)A GaAs substrate, and observed sharp luminescence lines. These luminescence lines are classified into three types in terms of their excitation-power dependence. For one of them the intensity increases linearly with excitation power density, and the others that appear at the lower and higher energy sides of the linear one exhibit superlinear dependence. The difference in the excitation-power dependence reflects the number of excitons created in a QD, namely, the linear dependence originates from the lowest state of a confined exciton, and the others from biexcitonic and multiple exciton states.

Original languageEnglish
Pages (from-to)353-356
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume224
Issue number2
DOIs
Publication statusPublished - 2001 Mar 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Confined multiexciton states of GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface'. Together they form a unique fingerprint.

Cite this