Confined high-mobility electron gas at the Ruddlesden-Popper type heterointerfaces

M. Matvejeff, K. Nishio, R. Takahashi, M. Lippmaa

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    We study the transport properties of Ruddlesden-Popper type interfaces grown on SrTiO3 substrates, showing that in contrast to perovskite-type interfaces, no mobile carriers are observed in the substrate even when La ions of the rocksalt layer are in direct contact with the Ti-terminated surface of SrTiO3. Annealing at 800 °C and above can, however, be used to perform local chemical doping of the interface by La-ion diffusion into the SrTiO3 substrate, forming a metallic interface with confined high-mobility carriers. The technique can be used to reliably fabricate δ -doped perovskite quantum wells with sheet carrier densities below 1013 cm-2.

    Original languageEnglish
    Article number073105
    JournalApplied Physics Letters
    Volume98
    Issue number7
    DOIs
    Publication statusPublished - 2011 Feb 14

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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