We study the transport properties of Ruddlesden-Popper type interfaces grown on SrTiO3 substrates, showing that in contrast to perovskite-type interfaces, no mobile carriers are observed in the substrate even when La ions of the rocksalt layer are in direct contact with the Ti-terminated surface of SrTiO3. Annealing at 800 °C and above can, however, be used to perform local chemical doping of the interface by La-ion diffusion into the SrTiO3 substrate, forming a metallic interface with confined high-mobility carriers. The technique can be used to reliably fabricate δ -doped perovskite quantum wells with sheet carrier densities below 1013 cm-2.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)