Conduction tuning of graphene based on defect-induced localization

Shu Nakaharai, Tomohiko Iijima, Shinichi Ogawa, Shingo Suzuki, Song Lin Li, Kazuhito Tsukagoshi, Shintaro Sato, Naoki Yokoyama

Research output: Contribution to journalArticlepeer-review

71 Citations (Scopus)


The conduction properties of graphene were tuned by tailoring the lattice by using an accelerated helium ion beam to embed low-density defects in the lattice. The density of the embedded defects was estimated to be 2-3 orders of magnitude lower than that of carbon atoms, and they functionalized a graphene sheet in a more stable manner than chemical surface modifications can do. Current modulation through back gate biasing was demonstrated at room temperature with a current on-off ratio of 2 orders of magnitude, and the activation energy of the thermally activated transport regime was evaluated. The exponential dependence of the current on the length of the functionalized region in graphene suggested that conduction tuning is possible through strong localization of carriers at sites induced by a sparsely distributed random potential modulation.

Original languageEnglish
Pages (from-to)5694-5700
Number of pages7
JournalACS Nano
Issue number7
Publication statusPublished - 2013 Jul 23
Externally publishedYes


  • carrier transport
  • defect
  • graphene
  • helium ion microscope
  • ion irradiation
  • strong localization
  • transport gap

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)


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