Conduction properties of micro-crystals of 2,5-dimethyl-N,N′-dicyanoquinonediimine metal (metal = Ag, Cu) complexes on SiO2/Si substrates

Hiroshi M. Yamamoto; Yoshitaka Kawasugi; Hiromi Ito; Takeo Fukunaga; Toshiaki Suzuki; Kazuhito Tsukagoshi; Reizo Kato

doi:10.1016/j.solidstatesciences.2008.04.016

Conduction properties of micro-crystals of 2,5-dimethyl-N,N′-dicyanoquinonediimine metal (metal = Ag, Cu) complexes on SiO₂/Si substrates

Hiroshi M. Yamamoto, Yoshitaka Kawasugi, Hiromi Ito, Takeo Fukunaga, Toshiaki Suzuki, Kazuhito Tsukagoshi, Reizo Kato

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Conduction properties of two kinds of DMe-DCNQI complexes deposited on SiO₂/Si substrate are presented. Direct chemical growth of (DMe-DCNQI)₂Ag on the substrate afforded single crystals attached to a gold electrode deposited on the substrate. The system showed bistable switching behavior associated with rectifying property, which seems suitable for resistive random access memory. Speculative mechanism for this behavior is discussed. On the other hand, single crystal of (DMe-DCNQI-d₇)₂Cu grown elsewhere was attached to four gold electrodes by carbon paste and fixed on the substrate with epoxy resin. Four-probe measurement of this sample revealed an absence of metal-insulator (M-I) transition which is expected at 80 K for crystal without substrate. This phenomenon can be explained by pseudo-negative pressure effect due to the hard silicon substrate (DMe-DCNQI = 2,5-dimethyl-N,N′-dicyanoquinonediimine).

Original language	English
Pages (from-to)	1757-1761
Number of pages	5
Journal	Solid State Sciences
Volume	10
Issue number	12
DOIs	https://doi.org/10.1016/j.solidstatesciences.2008.04.016
Publication status	Published - 2008 Dec 1
Externally published	Yes

Keywords

Bistable resistance
Crystal growth on substrate
Micro-/nano-crystal
Molecular conductor
Negative pressure effect
Rectifier
Resistive random access memory

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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10.1016/j.solidstatesciences.2008.04.016

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Conduction properties of micro-crystals of 2,5-dimethyl-N,N′-dicyanoquinonediimine metal (metal = Ag, Cu) complexes on SiO₂/Si substrates. / Yamamoto, Hiroshi M.; Kawasugi, Yoshitaka; Ito, Hiromi; Fukunaga, Takeo; Suzuki, Toshiaki; Tsukagoshi, Kazuhito; Kato, Reizo.

In: Solid State Sciences, Vol. 10, No. 12, 01.12.2008, p. 1757-1761.

Research output: Contribution to journal › Article › peer-review

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title = "Conduction properties of micro-crystals of 2,5-dimethyl-N,N′-dicyanoquinonediimine metal (metal = Ag, Cu) complexes on SiO2/Si substrates",

abstract = "Conduction properties of two kinds of DMe-DCNQI complexes deposited on SiO2/Si substrate are presented. Direct chemical growth of (DMe-DCNQI)2Ag on the substrate afforded single crystals attached to a gold electrode deposited on the substrate. The system showed bistable switching behavior associated with rectifying property, which seems suitable for resistive random access memory. Speculative mechanism for this behavior is discussed. On the other hand, single crystal of (DMe-DCNQI-d7)2Cu grown elsewhere was attached to four gold electrodes by carbon paste and fixed on the substrate with epoxy resin. Four-probe measurement of this sample revealed an absence of metal-insulator (M-I) transition which is expected at 80 K for crystal without substrate. This phenomenon can be explained by pseudo-negative pressure effect due to the hard silicon substrate (DMe-DCNQI = 2,5-dimethyl-N,N′-dicyanoquinonediimine).",

keywords = "Bistable resistance, Crystal growth on substrate, Micro-/nano-crystal, Molecular conductor, Negative pressure effect, Rectifier, Resistive random access memory",

author = "Yamamoto, {Hiroshi M.} and Yoshitaka Kawasugi and Hiromi Ito and Takeo Fukunaga and Toshiaki Suzuki and Kazuhito Tsukagoshi and Reizo Kato",

year = "2008",

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AU - Yamamoto, Hiroshi M.

AU - Kawasugi, Yoshitaka

AU - Ito, Hiromi

AU - Fukunaga, Takeo

AU - Suzuki, Toshiaki

AU - Tsukagoshi, Kazuhito

AU - Kato, Reizo

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Conduction properties of two kinds of DMe-DCNQI complexes deposited on SiO2/Si substrate are presented. Direct chemical growth of (DMe-DCNQI)2Ag on the substrate afforded single crystals attached to a gold electrode deposited on the substrate. The system showed bistable switching behavior associated with rectifying property, which seems suitable for resistive random access memory. Speculative mechanism for this behavior is discussed. On the other hand, single crystal of (DMe-DCNQI-d7)2Cu grown elsewhere was attached to four gold electrodes by carbon paste and fixed on the substrate with epoxy resin. Four-probe measurement of this sample revealed an absence of metal-insulator (M-I) transition which is expected at 80 K for crystal without substrate. This phenomenon can be explained by pseudo-negative pressure effect due to the hard silicon substrate (DMe-DCNQI = 2,5-dimethyl-N,N′-dicyanoquinonediimine).

AB - Conduction properties of two kinds of DMe-DCNQI complexes deposited on SiO2/Si substrate are presented. Direct chemical growth of (DMe-DCNQI)2Ag on the substrate afforded single crystals attached to a gold electrode deposited on the substrate. The system showed bistable switching behavior associated with rectifying property, which seems suitable for resistive random access memory. Speculative mechanism for this behavior is discussed. On the other hand, single crystal of (DMe-DCNQI-d7)2Cu grown elsewhere was attached to four gold electrodes by carbon paste and fixed on the substrate with epoxy resin. Four-probe measurement of this sample revealed an absence of metal-insulator (M-I) transition which is expected at 80 K for crystal without substrate. This phenomenon can be explained by pseudo-negative pressure effect due to the hard silicon substrate (DMe-DCNQI = 2,5-dimethyl-N,N′-dicyanoquinonediimine).

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KW - Crystal growth on substrate

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KW - Rectifier

KW - Resistive random access memory

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