@inproceedings{3ac091b125f945cfb5b3370cd72e00d7,
title = "Conductance quantisation in an induced hole quantum wire",
abstract = "We have fabricated and studied a ballistic one-dimensional p-type quantum wire using an undoped AlGaAs/GaAs structure. The absence of modulation doping eliminates long-range disorder potential scattering and allows high carrier mobilities to be achieved over a wide range of hole densities, and in particular, at very low densities where carrier-carrier interactions are strongest. The device exhibits clear quantised conductance plateaus with highly stable gate characteristics.",
keywords = "Holes, Quantum wire, Undoped heterostructure",
author = "O. Klochan and Clarke, {W. R.} and R. Danneau and Micolich, {A. P.} and Ho, {L. H.} and Hamilton, {A. R.} and K. Muraki and Yoshiro Hirayama",
year = "2007",
month = dec,
day = "1",
doi = "10.1063/1.2730073",
language = "English",
isbn = "9780735403970",
series = "AIP Conference Proceedings",
pages = "681--682",
booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",
note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",
}