Conductance characteristics of ballistic one-dimensional channels controlled by a gate electrode

Y. Hirayama, T. Saku

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Abstract

Ballistic one-dimensional channels are fabricated using a highly resistive region induced by focused Ga ion beam scanning. Both wide and narrow channels are fabricated using this process. Transport characteristics of these channels are controlled by a voltage applied to the Schottky electrode on the channel. The channels show multiple-step structures in their transport characteristics at low temperature when the gate voltage is varied. This is probably due to the ballistic transport through one-dimensional quantized electron states. For narrower channels, the number of the observed steps becomes fewer. Instead, the structures are observable at higher temperature.

Original languageEnglish
Pages (from-to)2556-2558
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number25
DOIs
Publication statusPublished - 1989
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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