Conductance anisotropy of high-mobility, modulation-doped GaAs single quantum wells

K. J. Friedland, R. Hey, O. Bierwagen, H. Kostial, Y. Hirayama, K. H. Ploog

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

The conductance in high-mobility and high-density, modulation-doped GaAs single quantum wells on GaAs(0 0 1) substrates with thin spacer layers is strongly anisotropic with a 2-3 times higher mobility in the [1̄ 1 0] than that in the [1 1 0] direction. We show that the anisotropic scattering potential is strongly influenced by additional X-like electrons in the barriers formed by short-period superlattices. The X-electrons are able to considerably smooth the fluctuations of the potential; thus, increasing the correlation length of the fluctuations. We investigate the correlation length of the potential fluctuations by oscillations in the low-field magnetoresistance.

Original languageEnglish
Pages (from-to)642-645
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume13
Issue number2-4
DOIs
Publication statusPublished - 2002 Mar
Externally publishedYes

Keywords

  • Anisotropic magnetotransport
  • High mobility two-dimensional electrons

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Conductance anisotropy of high-mobility, modulation-doped GaAs single quantum wells'. Together they form a unique fingerprint.

Cite this