Conductance anisotropy of high-mobility, modulation-doped GaAs single quantum wells

K. J. Friedland; R. Hey; O. Bierwagen; H. Kostial; Y. Hirayama; K. H. Ploog

doi:10.1016/S1386-9477(02)00207-2

Conductance anisotropy of high-mobility, modulation-doped GaAs single quantum wells

K. J. Friedland, R. Hey, O. Bierwagen, H. Kostial, Y. Hirayama, K. H. Ploog

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The conductance in high-mobility and high-density, modulation-doped GaAs single quantum wells on GaAs(0 0 1) substrates with thin spacer layers is strongly anisotropic with a 2-3 times higher mobility in the [1̄ 1 0] than that in the [1 1 0] direction. We show that the anisotropic scattering potential is strongly influenced by additional X-like electrons in the barriers formed by short-period superlattices. The X-electrons are able to considerably smooth the fluctuations of the potential; thus, increasing the correlation length of the fluctuations. We investigate the correlation length of the potential fluctuations by oscillations in the low-field magnetoresistance.

Original language	English
Pages (from-to)	642-645
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	13
Issue number	2-4
DOIs	https://doi.org/10.1016/S1386-9477(02)00207-2
Publication status	Published - 2002 Mar
Externally published	Yes

Keywords

Anisotropic magnetotransport
High mobility two-dimensional electrons

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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@article{0f1a68095fb840608a58549d5819d304,

title = "Conductance anisotropy of high-mobility, modulation-doped GaAs single quantum wells",

abstract = "The conductance in high-mobility and high-density, modulation-doped GaAs single quantum wells on GaAs(0 0 1) substrates with thin spacer layers is strongly anisotropic with a 2-3 times higher mobility in the [{\=1} 1 0] than that in the [1 1 0] direction. We show that the anisotropic scattering potential is strongly influenced by additional X-like electrons in the barriers formed by short-period superlattices. The X-electrons are able to considerably smooth the fluctuations of the potential; thus, increasing the correlation length of the fluctuations. We investigate the correlation length of the potential fluctuations by oscillations in the low-field magnetoresistance.",

keywords = "Anisotropic magnetotransport, High mobility two-dimensional electrons",

author = "Friedland, {K. J.} and R. Hey and O. Bierwagen and H. Kostial and Y. Hirayama and Ploog, {K. H.}",

year = "2002",

month = mar,

doi = "10.1016/S1386-9477(02)00207-2",

language = "English",

volume = "13",

pages = "642--645",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "2-4",

}

TY - JOUR

T1 - Conductance anisotropy of high-mobility, modulation-doped GaAs single quantum wells

AU - Friedland, K. J.

AU - Hey, R.

AU - Bierwagen, O.

AU - Kostial, H.

AU - Hirayama, Y.

AU - Ploog, K. H.

PY - 2002/3

Y1 - 2002/3

N2 - The conductance in high-mobility and high-density, modulation-doped GaAs single quantum wells on GaAs(0 0 1) substrates with thin spacer layers is strongly anisotropic with a 2-3 times higher mobility in the [1̄ 1 0] than that in the [1 1 0] direction. We show that the anisotropic scattering potential is strongly influenced by additional X-like electrons in the barriers formed by short-period superlattices. The X-electrons are able to considerably smooth the fluctuations of the potential; thus, increasing the correlation length of the fluctuations. We investigate the correlation length of the potential fluctuations by oscillations in the low-field magnetoresistance.

AB - The conductance in high-mobility and high-density, modulation-doped GaAs single quantum wells on GaAs(0 0 1) substrates with thin spacer layers is strongly anisotropic with a 2-3 times higher mobility in the [1̄ 1 0] than that in the [1 1 0] direction. We show that the anisotropic scattering potential is strongly influenced by additional X-like electrons in the barriers formed by short-period superlattices. The X-electrons are able to considerably smooth the fluctuations of the potential; thus, increasing the correlation length of the fluctuations. We investigate the correlation length of the potential fluctuations by oscillations in the low-field magnetoresistance.

KW - Anisotropic magnetotransport

KW - High mobility two-dimensional electrons

UR - http://www.scopus.com/inward/record.url?scp=0036492838&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036492838&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(02)00207-2

DO - 10.1016/S1386-9477(02)00207-2

M3 - Article

AN - SCOPUS:0036492838

VL - 13

SP - 642

EP - 645

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 2-4

ER -

Conductance anisotropy of high-mobility, modulation-doped GaAs single quantum wells

Abstract

Keywords

ASJC Scopus subject areas

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