Abstract
The conductance in high-mobility and high-density, modulation-doped GaAs single quantum wells on GaAs(0 0 1) substrates with thin spacer layers is strongly anisotropic with a 2-3 times higher mobility in the [1̄ 1 0] than that in the [1 1 0] direction. We show that the anisotropic scattering potential is strongly influenced by additional X-like electrons in the barriers formed by short-period superlattices. The X-electrons are able to considerably smooth the fluctuations of the potential; thus, increasing the correlation length of the fluctuations. We investigate the correlation length of the potential fluctuations by oscillations in the low-field magnetoresistance.
Original language | English |
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Pages (from-to) | 642-645 |
Number of pages | 4 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 13 |
Issue number | 2-4 |
DOIs | |
Publication status | Published - 2002 Mar |
Externally published | Yes |
Keywords
- Anisotropic magnetotransport
- High mobility two-dimensional electrons
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics