Conditions for the spin rectification phenomena predicted for semiconducting triple barrier structures in the presence of the rashba spin-orbit coupling

Takaaki Koga, Junsaku Nitta, Tatsushi Akazaki, Hideaki Takayanagi

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

We propose the fabrication of a spin rectifying diode that utilizes the Rashba spin-orbit coupling, by the application of semiconducting triple barrier structures. This spin diode makes use of spin-dependent resonant tunneling levels that are formed in the triple barrier structures. We found that, for a certain emitter-collector bias voltage, it is possible to engineer the structure in such a way that a resonant level formed within the first quantum well matches that of the second quantum well only for a selected spin state, thus realizing an electronic spin rectifier. The calculated spin-filter efficiency of the transmitted current through the device, which is defined as |I↑ - I↓|/(I↑ + I↓), is found to be higher than 99.9%.

Original languageEnglish
Pages (from-to)2501-2504
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number4 B
DOIs
Publication statusPublished - 2002 Apr 1
Externally publishedYes

Keywords

  • InGaAs/InAlAs
  • Rashba spin-orbit coupling
  • Resonant tunneling diode
  • Spin filter
  • Spin injection

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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