Abstract
We propose the fabrication of a spin rectifying diode that utilizes the Rashba spin-orbit coupling, by the application of semiconducting triple barrier structures. This spin diode makes use of spin-dependent resonant tunneling levels that are formed in the triple barrier structures. We found that, for a certain emitter-collector bias voltage, it is possible to engineer the structure in such a way that a resonant level formed within the first quantum well matches that of the second quantum well only for a selected spin state, thus realizing an electronic spin rectifier. The calculated spin-filter efficiency of the transmitted current through the device, which is defined as |I↑ - I↓|/(I↑ + I↓), is found to be higher than 99.9%.
Original language | English |
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Pages (from-to) | 2501-2504 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 41 |
Issue number | 4 B |
DOIs | |
Publication status | Published - 2002 Apr 1 |
Externally published | Yes |
Keywords
- InGaAs/InAlAs
- Rashba spin-orbit coupling
- Resonant tunneling diode
- Spin filter
- Spin injection
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)