Abstract
We propose the fabrication of a spin rectifying diode that utilizes the Rashba spin-orbit coupling, by the application of semiconducting triple barrier structures. This spin diode makes use of spin-dependent resonant tunneling levels that are formed in the triple barrier structures. We found that, for a certain emitter-collector bias voltage, it is possible to engineer the structure in such a way that a resonant level formed within the first quantum well matches that of the second quantum well only for a selected spin state, thus realizing an electronic spin rectifier. The calculated spin-filter efficiency of the transmitted current through the device, which is defined as |I↑ - I↓|/(I↑ + I↓), is found to be higher than 99.9%.
| Original language | English |
|---|---|
| Pages (from-to) | 2501-2504 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 41 |
| Issue number | 4 B |
| DOIs | |
| Publication status | Published - 2002 Apr |
| Externally published | Yes |
Keywords
- InGaAs/InAlAs
- Rashba spin-orbit coupling
- Resonant tunneling diode
- Spin filter
- Spin injection
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)