Conditions for seeded growth of GaN crystals by the Na flux method

Masato Aoki, Hisanori Yamane, Masahiko Shimada, Seiji Sarayama, Francis J. DiSalvo

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)

Abstract

Conditions for seeded growth of GaN crystals by the Na flux method were investigated. Seeded growth in the Na flux could be achieved under temperature-N2 pressure conditions between the condition of GaN formation without seeding and the condition of GaN decomposition. GaN single crystals with a maximum area of 3.0 × 1.5 mm2 and thickness of 1.0 mm were grown from seeds at 850 °C and 2 MPa of N2 for 200 h. The crystal growth occurred selectively on the (0001) Ga-polar surface of the platelet seed crystals. The growth rate in the c direction was higher than those of other directions and increased with growth temperature and N2 pressure. The maximum growth rate in the c direction was about 4 μm/h at 850 °C and 2 MPa of N2.

Original languageEnglish
Pages (from-to)660-664
Number of pages5
JournalMaterials Letters
Volume56
Issue number5
DOIs
Publication statusPublished - 2002 Nov

Keywords

  • GaN
  • Growth condition
  • Seeded growth
  • Single crystal

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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