Concentration of point defects in binary NiAl

Y. L. Hao, Y. Song, R. Yang, Y. Y. Cui, D. Li, M. Niinomi

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


A mean-field-type model was established to describe the concentration of point defects in binary NiAl by taking into account the effects of crystal expansion and off-stoichiometry. Different from some recent studies, this analysis shows that constitutional vacancies are present only in Al-rich NiAl at T = 0 K but that the vacancy concentration decreases with increasing temperature until diffusion is activated and thereafter becomes nearly independent of temperature. Such vacancy formation behaviour in Al-rich NiAl belongs to the category of metastable constitutional type according to a method of classifying vacancy formation in B2 crystals proposed in this letter.

Original languageEnglish
Pages (from-to)375-386
Number of pages12
JournalPhilosophical Magazine Letters
Issue number6
Publication statusPublished - 2003 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics


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