Abstract
Field-ion microscopy of semiconductors is now becoming a popular research project in many laboratories. However, it is still not easy to get good field-ion images (FI images) of semiconductors and to interpret the observed images. We present here some computer simulations of the field-ion images of Si obtained by using a low-cost microcomputer. Using the conventional thin shell method for image formation, FI images of Si tips oriented along left bracket 111 right bracket , left bracket 110 right bracket and left bracket 100 right bracket directions were simulated and compared with the experimental FI images. A good agreement was obtained in the case of the left bracket 111 right bracket oriented tip surface, while in other cases a detailed comparison was found to be difficult because of the lack of sufficient resolution in the observed FI images. This work can be extended and applied to the study of metal-semiconductor interfaces.
| Original language | English |
|---|---|
| Pages (from-to) | 631-635 |
| Number of pages | 5 |
| Journal | Shinku/Journal of the Vacuum Society of Japan |
| Volume | 28 |
| Issue number | 8 |
| Publication status | Published - 1985 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Surfaces and Interfaces