Comprehensive study on chemical structures of compositional transition layer at SiO2/Si(100) interface

T. Suwa, A. Teramoto, T. Muro, T. Kinoshita, S. Sugawa, Takeo Hattori, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The angle-resolved Si 2p photoelectron spectra arising from the transition layers formed on both sides of the SiO2/Si(100) interface covered with more than one SiO2 monolayer, which is device grade, were measured with the probing depth of nearly 2 nm. The novel analytical procedure of these spectra is developed by considering that one SiO2 monolayer, two compositional transition layers (CTLs), and one Si monolayer on Si substrate surface are continuously connected with each other. It was found for the interface formed in dry O2 at 900 °C that two CTLs constitute the first and second CTLs. The first CTL formed at the interface consists mainly of Si1+, Si2+, and Si0 and the second CTL formed on the first CTL consists mainly of Si3+ and Si4+. Influences of oxidation temperature, annealing in forming gas on the chemical structures of transition layers formed on both sides of the interface are also discussed.

Original languageEnglish
Title of host publicationDielectric Materials and Metals for Nanoelectronics and Photonics 10
Pages313-318
Number of pages6
Edition4
DOIs
Publication statusPublished - 2012 Dec 1
EventSymposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting - Honolulu, HI, United States
Duration: 2012 Oct 72012 Oct 12

Publication series

NameECS Transactions
Number4
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting
CountryUnited States
CityHonolulu, HI
Period12/10/712/10/12

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Comprehensive study on chemical structures of compositional transition layer at SiO<sub>2</sub>/Si(100) interface'. Together they form a unique fingerprint.

  • Cite this

    Suwa, T., Teramoto, A., Muro, T., Kinoshita, T., Sugawa, S., Hattori, T., & Ohmi, T. (2012). Comprehensive study on chemical structures of compositional transition layer at SiO2/Si(100) interface. In Dielectric Materials and Metals for Nanoelectronics and Photonics 10 (4 ed., pp. 313-318). (ECS Transactions; Vol. 50, No. 4). https://doi.org/10.1149/05004.0313ecst