Comprehensive study of CoFeB-MgO magnetic tunnel junction characteristics with single- and double-interface scaling down to 1X nm

H. Sato, T. Yamamoto, M. Yamanouchi, S. Ikeda, S. Fukami, K. Kinoshita, F. Matsukura, N. Kasai, H. Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

25 Citations (Scopus)

Abstract

We study characteristics of CoFeB-MgO magnetic tunnel junction with perpendicular easy-axis (p-MTJ) at a reduced dimension down to 1X nm fabricated by hard-mask process. CoFeB-MgO p-MTJ with double-interface shows higher thermal stability down to 1X nm than that with single-interface. Thermal stability factor of 58 and intrinsic critical current of 24 μA are obtained in the CoFeB-MgO magnetic tunnel junction with perpendicular easy-axis using double-interface structure at a diameter of 20 nmφ.

Original languageEnglish
Title of host publication2013 IEEE International Electron Devices Meeting, IEDM 2013
Pages3.2.1-3.2.4
DOIs
Publication statusPublished - 2013
Event2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
Duration: 2013 Dec 92013 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2013 IEEE International Electron Devices Meeting, IEDM 2013
CountryUnited States
CityWashington, DC
Period13/12/913/12/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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