Comprehensive analysis of variability sources of FinFET characteristics

T. Matsukawa, S. O'uchi, K. Endo, Y. Ishikawa, H. Yamauchi, Y. X. Liu, J. Tsukada, K. Sakamoto, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

134 Citations (Scopus)

Abstract

FinFET performance variability is comprehensively investigated for undoped/doped channels with various gate materials. By evaluating the influence of channel doping, fluctuation of gate length and that of fin thickness, it is found that gate workfunction variation (WFV) is the dominant source of V t variation for the undoped FinFET and that the WFV increases with scaling of gate area. In addition, it is demonstrated that the extension doping optimization successfully reduces the variation of parasitic resistance (R p) due to fin thickness fluctuation as well as Rp itself. FinFET-SRAM performance in 20-nm-Lg node is predicted by the compact model using the measured variation data.

Original languageEnglish
Title of host publication2009 Symposium on VLSI Technology, VLSIT 2009
Pages118-119
Number of pages2
Publication statusPublished - 2009 Nov 16
Externally publishedYes
Event2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan
Duration: 2009 Jun 162009 Jun 18

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2009 Symposium on VLSI Technology, VLSIT 2009
CountryJapan
CityKyoto
Period09/6/1609/6/18

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Matsukawa, T., O'uchi, S., Endo, K., Ishikawa, Y., Yamauchi, H., Liu, Y. X., Tsukada, J., Sakamoto, K., & Masahara, M. (2009). Comprehensive analysis of variability sources of FinFET characteristics. In 2009 Symposium on VLSI Technology, VLSIT 2009 (pp. 118-119). [5200656] (Digest of Technical Papers - Symposium on VLSI Technology).