Comprehensive analysis of I on variation in metal gate FinFETs for 20nm and beyond

Takashi Matsukawa, Yongxun Liu, Shin Ichi O'uchi, Kazuhiko Endo, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Hiroyuki Ota, Shinji Migita, Yukinori Morita, Wataru Mizubayashi, Kunihiro Sakamoto, Meishoku Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

On-current (I on) variation in metal gate FinFETs is comprehensively investigated with regard to the contributions of threshold voltage (V t), parasitic resistance (R para) and trans-conductance (G m) variations, which are successfully extracted as the independent variation sources. It is experimentally confirmed that the G m variation of the FinFETs exhibits a linear relationship in Pelgrom plot as well as the V t variation, and is not reduced with scaling the gate dielectric thickness unlike the V t variation. Perspective for beyond 20nm represents that the G m variation will be the dominant I on variation source. A solution to reduce the G m variation for the FinFET is also proposed.

Original languageEnglish
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
Pages23.5.1-23.5.4
DOIs
Publication statusPublished - 2011 Dec 1
Externally publishedYes
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: 2011 Dec 52011 Dec 7

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period11/12/511/12/7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Comprehensive analysis of I <sub>on</sub> variation in metal gate FinFETs for 20nm and beyond'. Together they form a unique fingerprint.

Cite this