Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals

Kazuo Nakajima, Toshihiro Kusunoki, Yukinaga Azuma, Noritaka Usami, Kozo Fujiwara, Toru Ujihara, Gen Sazaki, Toetsu Shishido

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

The effect of the supply of depleted Si solute elements on the compositional variation in the Si-rich SiGe bulk crystals was studied using the method which was used to grow Ge-rich SiGe single crystals with a uniform composition. By selecting the proper pulling rate, we can obtain Si-rich Si1-xGex bulk crystals with uniform composition of x=0.1 without using the supply mechanism of depleted Si solute elements. When the supply mechanism of Si solute elements was used, the initial composition in Si-rich SiGe crystals can be much more easily determined by controlling the growth temperature than that in Ge-rich crystals because the Si seed crystal is not melted down. The supply of Si solute elements is very effective to change the compositional variation even for Si-rich SiGe crystals.

Original languageEnglish
Pages (from-to)373-381
Number of pages9
JournalJournal of Crystal Growth
Volume240
Issue number3-4
DOIs
Publication statusPublished - 2002 May 1

Keywords

  • A1. Heterostructure
  • A2. Bridgman method
  • A2. Growth from melt
  • A2. Single crystal growth
  • B1. Germanium silicon alloys

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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