Compositional uniformity of a Si0.5Ge0.5 crystal grown on board the International Space Station

K. Kinoshita, Y. Arai, Y. Inatomi, T. Tsukada, H. Miyata, R. Tanaka, J. Yoshikawa, T. Kihara, H. Tomioka, H. Shibayama, Y. Kubota, Y. Warashina, Y. Ishizuka, Y. Harada, S. Wada, T. Ito, N. Nagai, K. Abe, S. Sumioka, M. TakayanagiS. Yoda

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10 Citations (Scopus)


A Si0.5Ge0.5 crystal was grown on board the International Space Station (ISS) using the traveling liquidus-zone method. Average Ge concentration was 49±2 at% for the growth length of 14.5 mm. Radial compositional uniformity was excellent especially between the growth length of 3 and 9 mm; concentration fluctuation was less than 1 at%. In this experiment, cartridge surface temperatures were monitored and heater temperatures were adjusted based on the monitored temperatures for improving compositional uniformity of a grown crystal. A step temperature change by 1 °C was imposed for adjusting heater temperatures. This procedure made it possible to observe growth interface shape; striations due to heater temperature change were observed by a backscattered electron image. Growth rates were precisely determined by the relation between interval of heater temperature change and the distance between striations. Based on the measured growth rates, two-dimensional growth model for the traveling liquidus-zone method was discussed.

Original languageEnglish
Pages (from-to)47-51
Number of pages5
JournalJournal of Crystal Growth
Publication statusPublished - 2015 Jun 1


  • A1. Convection
  • A1. Diffusion
  • A2. Growth from solution
  • A2. Traveling solvent zone growth
  • B1. Germanium silicon alloys

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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