Compositional disordering of gaas-alxga1-xas superlattice by ga focused ion beam implantation and its application to submicron structure fabrication

Yoshiro Hirayama, Yoshifumi Suzuki, Seigo Tarucha, Hiroshi Okamoto

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76 Citations (Scopus)

Abstract

Using a focused ion beam technology, Ga ion is implanted into a GaAs-AlxGa1-xAs superlattice epitaxial wafer. The compositional disordering of the superlattice occurs during an annealing after ion-implantation. Interdiffusion coefficient of Ga and A1 is measured from the photoluminescence peak energy shift as a function of annealing time and the result shows that it is as large as that for Si ion implanted superlattice. By line-and-space scan of the Ga ion beam, a submicron periodic structure of the superlattice and the mixed crystal is fabricated over the epi-wafer and examined by low temperature cathodo-luminescence topography.

Original languageEnglish
Pages (from-to)L516-L518
JournalJapanese journal of applied physics
Volume24
Issue number7
DOIs
Publication statusPublished - 1985 Jul
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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