Compositional disordering and very-fine lateral definition of GaAs-AlGaAs superlattices by focused Ga ion beams

Y. Hirayama, Y. Suzuki, H. Okamoto

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

Compositional disordering induced by Ga ion implantation was studied in GaAs-AlGaAs superlattices. A submicron periodic structure of superlattice region and compositionally disordered region over a surface of a superlattice epitaxial wafer was successfully fabricated using line-and-space scan of focused Ga ion beam implantation and annealing.

Original languageEnglish
Pages (from-to)98-104
Number of pages7
JournalSurface Science
Volume174
Issue number1-3
DOIs
Publication statusPublished - 1986 Aug 3
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Compositional disordering and very-fine lateral definition of GaAs-AlGaAs superlattices by focused Ga ion beams'. Together they form a unique fingerprint.

Cite this