Compositional depth profiling of ultrathin oxynitride/Si interface using XPS

H. Kato, K. Nishizaki, K. Takahashi, H. Nohira, N. Tamura, K. Hikazutani, S. Sano, T. Hattori

    Research output: Contribution to journalArticlepeer-review

    9 Citations (Scopus)

    Abstract

    The atomic-scale compositional depth profiling of oxynitride/Si interface by applying the maximum entropy concept to the angle-resolved Si 2p photoelectorn spectra was performed after eliminating the effect of photoelectron diffraction on the Si 2p photoelectron spectra arising from Si substrate for oxynitride films containing the maximum nitrogen concentration of 3 and 6at.% at the SiO2/Si(1 0 0) interface. Although the distribution of intermediate oxidation states of Si depends on the amount of nitrogen atoms incorporated at the interface, total amount of intermediate oxidation states of Si does not depend on the nitrogen atoms incorporated at the interface.

    Original languageEnglish
    Pages (from-to)39-42
    Number of pages4
    JournalApplied Surface Science
    Volume190
    Issue number1-4
    DOIs
    Publication statusPublished - 2002 May 8

    Keywords

    • Depth profiling
    • Intermediate oxidation states of Si
    • Oxynitride
    • X-ray photoelectron spectroscopy

    ASJC Scopus subject areas

    • Physical and Theoretical Chemistry
    • Surfaces, Coatings and Films
    • Condensed Matter Physics

    Fingerprint

    Dive into the research topics of 'Compositional depth profiling of ultrathin oxynitride/Si interface using XPS'. Together they form a unique fingerprint.

    Cite this