Compositional and structural transition layer studied by the energy loss of O 1s photoelectrons

H. Nohira; K. Takahashi; T. Hattori

doi:10.1016/S0040-6090(98)01664-2

Compositional and structural transition layer studied by the energy loss of O 1s photoelectrons

H. Nohira, K. Takahashi, T. Hattori

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The inelastic scattering of O Is photoelectrons in ultra-thin silicon oxides thermally grown on Si(111) surface in 1 Torr dry oxygen at 600-880°C was studied. The folloxving results were obtained: (1) the energy loss of O 1s photoelectrons arising from band gap ionization in SiO₂ can be observed for oxide films with thickness larger than about 1 nm, (2) the energy loss in the energy range from 3 to 9 eV observed for O 1s photoelectrons can be correlated mostly with the compositional transition layer.

Original language	English
Pages (from-to)	401-403
Number of pages	3
Journal	Thin Solid Films
Volume	343-344
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(98)01664-2
Publication status	Published - 1999 Jan 1

Keywords

Energy loss spectroscopy
O 1s photoelectron
Silicon oxide
Transition layer
X-ray photoelectron spectroscopy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(98)01664-2

Cite this

@article{5adfd5d047914deaa6205177519c4d48,

title = "Compositional and structural transition layer studied by the energy loss of O 1s photoelectrons",

abstract = "The inelastic scattering of O Is photoelectrons in ultra-thin silicon oxides thermally grown on Si(111) surface in 1 Torr dry oxygen at 600-880°C was studied. The folloxving results were obtained: (1) the energy loss of O 1s photoelectrons arising from band gap ionization in SiO2 can be observed for oxide films with thickness larger than about 1 nm, (2) the energy loss in the energy range from 3 to 9 eV observed for O 1s photoelectrons can be correlated mostly with the compositional transition layer.",

keywords = "Energy loss spectroscopy, O 1s photoelectron, Silicon oxide, Transition layer, X-ray photoelectron spectroscopy",

author = "H. Nohira and K. Takahashi and T. Hattori",

year = "1999",

month = jan,

day = "1",

doi = "10.1016/S0040-6090(98)01664-2",

language = "English",

volume = "343-344",

pages = "401--403",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Compositional and structural transition layer studied by the energy loss of O 1s photoelectrons

AU - Nohira, H.

AU - Takahashi, K.

AU - Hattori, T.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - The inelastic scattering of O Is photoelectrons in ultra-thin silicon oxides thermally grown on Si(111) surface in 1 Torr dry oxygen at 600-880°C was studied. The folloxving results were obtained: (1) the energy loss of O 1s photoelectrons arising from band gap ionization in SiO2 can be observed for oxide films with thickness larger than about 1 nm, (2) the energy loss in the energy range from 3 to 9 eV observed for O 1s photoelectrons can be correlated mostly with the compositional transition layer.

AB - The inelastic scattering of O Is photoelectrons in ultra-thin silicon oxides thermally grown on Si(111) surface in 1 Torr dry oxygen at 600-880°C was studied. The folloxving results were obtained: (1) the energy loss of O 1s photoelectrons arising from band gap ionization in SiO2 can be observed for oxide films with thickness larger than about 1 nm, (2) the energy loss in the energy range from 3 to 9 eV observed for O 1s photoelectrons can be correlated mostly with the compositional transition layer.

KW - Energy loss spectroscopy

KW - O 1s photoelectron

KW - Silicon oxide

KW - Transition layer

KW - X-ray photoelectron spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=0032628701&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032628701&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(98)01664-2

DO - 10.1016/S0040-6090(98)01664-2

M3 - Article

AN - SCOPUS:0032628701

VL - 343-344

SP - 401

EP - 403

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -

Compositional and structural transition layer studied by the energy loss of O 1s photoelectrons

Abstract

Keywords

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