Abstract
The inelastic scattering of O Is photoelectrons in ultra-thin silicon oxides thermally grown on Si(111) surface in 1 Torr dry oxygen at 600-880°C was studied. The folloxving results were obtained: (1) the energy loss of O 1s photoelectrons arising from band gap ionization in SiO2 can be observed for oxide films with thickness larger than about 1 nm, (2) the energy loss in the energy range from 3 to 9 eV observed for O 1s photoelectrons can be correlated mostly with the compositional transition layer.
Original language | English |
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Pages (from-to) | 401-403 |
Number of pages | 3 |
Journal | Thin Solid Films |
Volume | 343-344 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 1999 Jan 1 |
Keywords
- Energy loss spectroscopy
- O 1s photoelectron
- Silicon oxide
- Transition layer
- X-ray photoelectron spectroscopy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry