Compositional and structural transition layer studied by the energy loss of O 1s photoelectrons

H. Nohira, K. Takahashi, T. Hattori

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    The inelastic scattering of O Is photoelectrons in ultra-thin silicon oxides thermally grown on Si(111) surface in 1 Torr dry oxygen at 600-880°C was studied. The folloxving results were obtained: (1) the energy loss of O 1s photoelectrons arising from band gap ionization in SiO2 can be observed for oxide films with thickness larger than about 1 nm, (2) the energy loss in the energy range from 3 to 9 eV observed for O 1s photoelectrons can be correlated mostly with the compositional transition layer.

    Original languageEnglish
    Pages (from-to)401-403
    Number of pages3
    JournalThin Solid Films
    Volume343-344
    Issue number1-2
    DOIs
    Publication statusPublished - 1999 Jan 1

    Keywords

    • Energy loss spectroscopy
    • O 1s photoelectron
    • Silicon oxide
    • Transition layer
    • X-ray photoelectron spectroscopy

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry

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