Composition dependence of magnetoresistance effect and its annealing endurance in tunnel junctions having Mn-Ga electrode with high perpendicular magnetic anisotropy

Takahide Kubota; Masaaki Araidai; Shigemi Mizukami; Xianmin Zhang; Qinli Ma; Hiroshi Naganuma; Mikihiko Oogane; Yasuo Ando; Masaru Tsukada; Terunobu Miyazaki

doi:10.1063/1.3659484

Composition dependence of magnetoresistance effect and its annealing endurance in tunnel junctions having Mn-Ga electrode with high perpendicular magnetic anisotropy

Takahide Kubota, Masaaki Araidai, Shigemi Mizukami, Xianmin Zhang, Qinli Ma, Hiroshi Naganuma, Mikihiko Oogane, Yasuo Ando, Masaru Tsukada, Terunobu Miyazaki

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Abstract

The composition dependence of the tunnel magnetoresistance (TMR) effect in Mn-Ga/MgO/CoFe magnetic tunnel junctions (MTJs) for Mn₅₄Ga ₄₆, Mn₆₂Ga₃₈, and Mn₇₁Ga ₂₉ (at. %) electrodes was investigated. An MTJ with a Mn ₆₂Ga₃₈ electrode showed a maximum TMR ratio of 23% at 10 K and high annealing endurance up to 375 °C. The bias voltage dependence of the TMR ratio was distinct among MTJs with different Mn-Ga compositions. Here, we discuss this dependence on the basis of the difference in the Δ₁ band dispersions for Mn-Ga alloys calculated by first principles.

Original language	English
Article number	192509
Journal	Applied Physics Letters
Volume	99
Issue number	19
DOIs	https://doi.org/10.1063/1.3659484
Publication status	Published - 2011 Nov 7

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Kubota, T., Araidai, M., Mizukami, S., Zhang, X., Ma, Q., Naganuma, H., Oogane, M., Ando, Y., Tsukada, M., & Miyazaki, T. (2011). Composition dependence of magnetoresistance effect and its annealing endurance in tunnel junctions having Mn-Ga electrode with high perpendicular magnetic anisotropy. Applied Physics Letters, 99(19), [192509]. https://doi.org/10.1063/1.3659484

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title = "Composition dependence of magnetoresistance effect and its annealing endurance in tunnel junctions having Mn-Ga electrode with high perpendicular magnetic anisotropy",

abstract = "The composition dependence of the tunnel magnetoresistance (TMR) effect in Mn-Ga/MgO/CoFe magnetic tunnel junctions (MTJs) for Mn54Ga 46, Mn62Ga38, and Mn71Ga 29 (at. %) electrodes was investigated. An MTJ with a Mn 62Ga38 electrode showed a maximum TMR ratio of 23% at 10 K and high annealing endurance up to 375 °C. The bias voltage dependence of the TMR ratio was distinct among MTJs with different Mn-Ga compositions. Here, we discuss this dependence on the basis of the difference in the Δ1 band dispersions for Mn-Ga alloys calculated by first principles.",

author = "Takahide Kubota and Masaaki Araidai and Shigemi Mizukami and Xianmin Zhang and Qinli Ma and Hiroshi Naganuma and Mikihiko Oogane and Yasuo Ando and Masaru Tsukada and Terunobu Miyazaki",

note = "Funding Information: This work was partly supported by a Grant for Industrial Technology Research from NEDO, the Strategic Japanese-German cooperative program (ASPIMATT) from the JST, and a Grant-in-Aid for Scientific Research from the JSPS.",

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T1 - Composition dependence of magnetoresistance effect and its annealing endurance in tunnel junctions having Mn-Ga electrode with high perpendicular magnetic anisotropy

AU - Kubota, Takahide

AU - Araidai, Masaaki

AU - Mizukami, Shigemi

AU - Zhang, Xianmin

AU - Ma, Qinli

AU - Naganuma, Hiroshi

AU - Oogane, Mikihiko

AU - Ando, Yasuo

AU - Tsukada, Masaru

AU - Miyazaki, Terunobu

N1 - Funding Information: This work was partly supported by a Grant for Industrial Technology Research from NEDO, the Strategic Japanese-German cooperative program (ASPIMATT) from the JST, and a Grant-in-Aid for Scientific Research from the JSPS.

PY - 2011/11/7

Y1 - 2011/11/7

N2 - The composition dependence of the tunnel magnetoresistance (TMR) effect in Mn-Ga/MgO/CoFe magnetic tunnel junctions (MTJs) for Mn54Ga 46, Mn62Ga38, and Mn71Ga 29 (at. %) electrodes was investigated. An MTJ with a Mn 62Ga38 electrode showed a maximum TMR ratio of 23% at 10 K and high annealing endurance up to 375 °C. The bias voltage dependence of the TMR ratio was distinct among MTJs with different Mn-Ga compositions. Here, we discuss this dependence on the basis of the difference in the Δ1 band dispersions for Mn-Ga alloys calculated by first principles.

AB - The composition dependence of the tunnel magnetoresistance (TMR) effect in Mn-Ga/MgO/CoFe magnetic tunnel junctions (MTJs) for Mn54Ga 46, Mn62Ga38, and Mn71Ga 29 (at. %) electrodes was investigated. An MTJ with a Mn 62Ga38 electrode showed a maximum TMR ratio of 23% at 10 K and high annealing endurance up to 375 °C. The bias voltage dependence of the TMR ratio was distinct among MTJs with different Mn-Ga compositions. Here, we discuss this dependence on the basis of the difference in the Δ1 band dispersions for Mn-Ga alloys calculated by first principles.

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Composition dependence of magnetoresistance effect and its annealing endurance in tunnel junctions having Mn-Ga electrode with high perpendicular magnetic anisotropy

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