Composition dependence of magnetoresistance effect and its annealing endurance in tunnel junctions having Mn-Ga electrode with high perpendicular magnetic anisotropy

Takahide Kubota; Masaaki Araidai; Shigemi Mizukami; Xianmin Zhang; Qinli Ma; Hiroshi Naganuma; Mikihiko Oogane; Yasuo Ando; Masaru Tsukada; Terunobu Miyazaki

doi:10.1063/1.3659484

Composition dependence of magnetoresistance effect and its annealing endurance in tunnel junctions having Mn-Ga electrode with high perpendicular magnetic anisotropy

Takahide Kubota, Masaaki Araidai, Shigemi Mizukami, Xianmin Zhang, Qinli Ma, Hiroshi Naganuma, Mikihiko Oogane, Yasuo Ando, Masaru Tsukada, Terunobu Miyazaki

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

The composition dependence of the tunnel magnetoresistance (TMR) effect in Mn-Ga/MgO/CoFe magnetic tunnel junctions (MTJs) for Mn₅₄Ga ₄₆, Mn₆₂Ga₃₈, and Mn₇₁Ga ₂₉ (at. %) electrodes was investigated. An MTJ with a Mn ₆₂Ga₃₈ electrode showed a maximum TMR ratio of 23% at 10 K and high annealing endurance up to 375 °C. The bias voltage dependence of the TMR ratio was distinct among MTJs with different Mn-Ga compositions. Here, we discuss this dependence on the basis of the difference in the Δ₁ band dispersions for Mn-Ga alloys calculated by first principles.

Original language	English
Article number	192509
Journal	Applied Physics Letters
Volume	99
Issue number	19
DOIs	https://doi.org/10.1063/1.3659484
Publication status	Published - 2011 Nov 7

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Kubota, T., Araidai, M., Mizukami, S., Zhang, X., Ma, Q., Naganuma, H., Oogane, M., Ando, Y., Tsukada, M., & Miyazaki, T. (2011). Composition dependence of magnetoresistance effect and its annealing endurance in tunnel junctions having Mn-Ga electrode with high perpendicular magnetic anisotropy. Applied Physics Letters, 99(19), [192509]. https://doi.org/10.1063/1.3659484

Composition dependence of magnetoresistance effect and its annealing endurance in tunnel junctions having Mn-Ga electrode with high perpendicular magnetic anisotropy. / Kubota, Takahide; Araidai, Masaaki; Mizukami, Shigemi; Zhang, Xianmin; Ma, Qinli; Naganuma, Hiroshi ; Oogane, Mikihiko ; Ando, Yasuo; Tsukada, Masaru; Miyazaki, Terunobu.

In: Applied Physics Letters, Vol. 99, No. 19, 192509, 07.11.2011.

Research output: Contribution to journal › Article › peer-review

Kubota, Takahide ; Araidai, Masaaki ; Mizukami, Shigemi ; Zhang, Xianmin ; Ma, Qinli ; Naganuma, Hiroshi ; Oogane, Mikihiko ; Ando, Yasuo ; Tsukada, Masaru ; Miyazaki, Terunobu. / Composition dependence of magnetoresistance effect and its annealing endurance in tunnel junctions having Mn-Ga electrode with high perpendicular magnetic anisotropy. In: Applied Physics Letters. 2011 ; Vol. 99, No. 19.

@article{7d5938a7b42141a0bd08fe520cb9d209,

title = "Composition dependence of magnetoresistance effect and its annealing endurance in tunnel junctions having Mn-Ga electrode with high perpendicular magnetic anisotropy",

abstract = "The composition dependence of the tunnel magnetoresistance (TMR) effect in Mn-Ga/MgO/CoFe magnetic tunnel junctions (MTJs) for Mn54Ga 46, Mn62Ga38, and Mn71Ga 29 (at. %) electrodes was investigated. An MTJ with a Mn 62Ga38 electrode showed a maximum TMR ratio of 23% at 10 K and high annealing endurance up to 375 °C. The bias voltage dependence of the TMR ratio was distinct among MTJs with different Mn-Ga compositions. Here, we discuss this dependence on the basis of the difference in the Δ1 band dispersions for Mn-Ga alloys calculated by first principles.",

author = "Takahide Kubota and Masaaki Araidai and Shigemi Mizukami and Xianmin Zhang and Qinli Ma and Hiroshi Naganuma and Mikihiko Oogane and Yasuo Ando and Masaru Tsukada and Terunobu Miyazaki",

year = "2011",

month = nov,

day = "7",

doi = "10.1063/1.3659484",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "19",

}

TY - JOUR

T1 - Composition dependence of magnetoresistance effect and its annealing endurance in tunnel junctions having Mn-Ga electrode with high perpendicular magnetic anisotropy

AU - Kubota, Takahide

AU - Araidai, Masaaki

AU - Mizukami, Shigemi

AU - Zhang, Xianmin

AU - Ma, Qinli

AU - Naganuma, Hiroshi

AU - Oogane, Mikihiko

AU - Ando, Yasuo

AU - Tsukada, Masaru

AU - Miyazaki, Terunobu

PY - 2011/11/7

Y1 - 2011/11/7

N2 - The composition dependence of the tunnel magnetoresistance (TMR) effect in Mn-Ga/MgO/CoFe magnetic tunnel junctions (MTJs) for Mn54Ga 46, Mn62Ga38, and Mn71Ga 29 (at. %) electrodes was investigated. An MTJ with a Mn 62Ga38 electrode showed a maximum TMR ratio of 23% at 10 K and high annealing endurance up to 375 °C. The bias voltage dependence of the TMR ratio was distinct among MTJs with different Mn-Ga compositions. Here, we discuss this dependence on the basis of the difference in the Δ1 band dispersions for Mn-Ga alloys calculated by first principles.

AB - The composition dependence of the tunnel magnetoresistance (TMR) effect in Mn-Ga/MgO/CoFe magnetic tunnel junctions (MTJs) for Mn54Ga 46, Mn62Ga38, and Mn71Ga 29 (at. %) electrodes was investigated. An MTJ with a Mn 62Ga38 electrode showed a maximum TMR ratio of 23% at 10 K and high annealing endurance up to 375 °C. The bias voltage dependence of the TMR ratio was distinct among MTJs with different Mn-Ga compositions. Here, we discuss this dependence on the basis of the difference in the Δ1 band dispersions for Mn-Ga alloys calculated by first principles.

UR - http://www.scopus.com/inward/record.url?scp=81155144596&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=81155144596&partnerID=8YFLogxK

U2 - 10.1063/1.3659484

DO - 10.1063/1.3659484

M3 - Article

AN - SCOPUS:81155144596

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

M1 - 192509

ER -