Composition dependence of band offsets for (LaAlO3) 1-x(Al2O3)x gate dielectrics determined by photoelectron spectroscopy and x-ray absorption spectroscopy

R. Yasuhara, M. Komatsu, H. Takabashi, S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, D. Kukuruznyak, T. Chikyow

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8 Citations (Scopus)

Abstract

Electronic structures of (LaAlO3)1-x(Al 2O3)x composite films (x=0, 0.2, 0.33, 0.5, and 1) for large scale integration (LSI) gate dielectrics deposited on p-type Si (100) substrates by a combinatorial pulsed laser deposition method have been analyzed using photoelectron spectroscopy and x-ray absorption spectroscopy. The systematic peak shifts due to chemical shifts were observed for core-level spectra. The conduction-band offset became smaller with increasing ratio of Al2O3, while the valence-band offset became larger. This precise determination of the band diagram revealed that LaAlO3 (x=0) had the optimum band offset for LSI gate dielectrics.

Original languageEnglish
Article number122904
JournalApplied Physics Letters
Volume89
Issue number12
DOIs
Publication statusPublished - 2006 Oct 2
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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