Electronic structures of (LaAlO3)1-x(Al 2O3)x composite films (x=0, 0.2, 0.33, 0.5, and 1) for large scale integration (LSI) gate dielectrics deposited on p-type Si (100) substrates by a combinatorial pulsed laser deposition method have been analyzed using photoelectron spectroscopy and x-ray absorption spectroscopy. The systematic peak shifts due to chemical shifts were observed for core-level spectra. The conduction-band offset became smaller with increasing ratio of Al2O3, while the valence-band offset became larger. This precise determination of the band diagram revealed that LaAlO3 (x=0) had the optimum band offset for LSI gate dielectrics.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)