Composition control and thickness dependence of {100}-oriented epitaxial BiCoO3 - BiFeO3 films grown by metalorganic chemical vapor deposition

Shintaro Yasui, Mitsumasa Nakajima, Hiroshi Naganuma, Soichiro Okamura, Ken Nishida, Takashi Yamamoto, Takashi Iijima, Masaki Azuma, Hitoshi Morioka, Keisuke Saito, Mutsuo Ishikawa, Tomoaki Yamada, Hiroshi Funakubo

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14 Citations (Scopus)


xBiCoO3 - (1-x)BiFeO3 films were deposited by metalorganic chemical vapor deposition. Although the film composition changed with deposition temperature, the composition could be adjusted by varying the input source gas composition at 700 °C. Moreover, adjusting the deposition time could change 0.16 BiCoO3 -0.84 BiFeO3 film thickness. The crystal symmetry changed from rhombohedral to tetragonal as the film thickness decreased for 0.16 BiCoO3 -0.84 BiFeO3 films grown on both (100) SrTiO3 and (100)cSrRuO 3∥(100)SrTiO3 substrates, implying that the x value of the crystal symmetry boundaries between the tetragonal and rhombohedral structures changes with film thickness.

Original languageEnglish
Article number061620
JournalJournal of Applied Physics
Issue number6
Publication statusPublished - 2009
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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