Composition, chemical structure, and electronic band structure of rare earth oxide/Si(1 0 0) interfacial transition layer

T. Hattori, T. Yoshida, T. Shiraishi, K. Takahashi, H. Nohira, S. Joumori, K. Nakajima, M. Suzuki, K. Kimura, I. Kashiwagi, C. Ohshima, S. Ohmi, H. Iwai

Research output: Contribution to journalConference articlepeer-review

99 Citations (Scopus)

Abstract

The experimental data for Gd2O3, as a typical example of rare earth oxide films, clearly indicate that combination of high resolution RBS and high resolution XPS studies is powerful for the determination of composition and chemical structures of high-k dielectric films. Conduction and valence band discontinuities at rare earth oxide/Si(100) interfaces were also determined by measuring the O 1s photoelectron energy loss and valence band spectra.

Original languageEnglish
Pages (from-to)283-287
Number of pages5
JournalMicroelectronic Engineering
Volume72
Issue number1-4
DOIs
Publication statusPublished - 2004 Apr
Externally publishedYes
EventProceedings of the 13th Biennial Conference on Insulating Film - Barcelona, Spain
Duration: 2003 Jun 182003 Jun 20

Keywords

  • Depth profiling
  • Electronic band structures
  • High-k dielectrics
  • Photoelectron spectroscopy
  • Rutherford back scattering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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