Abstract
A facile electrostatic modulation method is developed to control the charge neutrality points of ambipolar graphene transistors and to form a complementary-like structure for the fabrication of elementary logic gates. Graphene logic NOR and NAND gates are demonstrated, which are building pillars for logic computation. The result provides a possible route for graphene logic circuits.
Original language | English |
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Pages (from-to) | 1552-1556 |
Number of pages | 5 |
Journal | Small |
Volume | 7 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2011 Jun 6 |
Externally published | Yes |
Keywords
- bandgap
- field-effect transistors
- graphene
- logic gates
- nanoelectronics
ASJC Scopus subject areas
- Biotechnology
- Biomaterials
- Chemistry(all)
- Materials Science(all)