Series connection of two ferroelectric capacitors with complementary stored data allows both switching operations and non-destructive storage. This circuitry, used in a fully parallel 32b CAM, results in a dynamic power reduction by 2/3 and static power reduction by 1/9000 compared to a CMOS implementation using 0.6μm ferroelectric CMOS.
|Journal||Digest of Technical Papers - IEEE International Solid-State Circuits Conference|
|Publication status||Published - 2003|
|Event||2003 Digest of Technical Papers - , United States|
Duration: 2003 Feb 9 → 2003 Feb 13
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering