Complementary 5T-4MTJ nonvolatile TCAM cell circuit with phase-selective parallel writing scheme

Shoun Matsunaga, Akira Mochizuki, Noboru Sakimura, Ryusuke Nebashi, Tadahiko Sugibayashi, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Towards a compact and process-variation-tolerant nonvolatile ternary content-addressable memory (TCAM), we propose a novel complementary cell structure with just five transistors and four magnetic tunnel junction (MTJ) devices (5T-4MTJ). The complementary cell structure enlarges output voltage swing of each cell circuit together with match-line voltage swing in word circuit constructed by many bits of cell circuits, which eliminates search errors. We also propose a novel bit-parallel writing scheme, called phase-selective parallel writing, for the cell circuit. Every data is written into a complementary MTJ-device pair in two phases by selectively asserting bit-lines during 0-write phase or 1-write phase, not directly assigning write data to the bit-lines. Consequently, the phase-selective parallel writing scheme enables four-phase write for the proposed 5T-4MTJ-based word circuit.

Original languageEnglish
Article number20140297
JournalIEICE Electronics Express
Volume11
Issue number10
DOIs
Publication statusPublished - 2014

Keywords

  • Associative memory
  • Bit-parallel
  • Complementary
  • Process variation
  • STT
  • Spintronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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