Comparison of thermal and plasma oxidations for HfO 2 /Si interface

S. Hayashi, K. Yamamoto, Y. Harada, R. Mitsuhashi, K. Eriguchi, M. Kubota, M. Niwa

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


The HfO 2 /Si interface stability has been investigated by using a rapid thermal annealing (RTA), an inductively coupled plasma (ICP) and a reactive sputtering, as a comparison of thermal and plasma oxidations of the Hf/Si interface. Reduction in both capacitance equivalent thickness (CET) and leakage current density (J g ) was difficult to be attained by the thermal oxidation since it accompanies the crystalline HfO 2 with SiO 2 -like interface. Advantage is found for the plasma oxidation technique to oxidize Hf metal at low temperatures remaining the HfO 2 in an amorphous phase with silicate interface. Reduction in both CET and J g was attained by the plasma oxidation and a Hf metal pre-deposition technique.

Original languageEnglish
Pages (from-to)228-233
Number of pages6
JournalApplied Surface Science
Issue number1-4 SPEC.
Publication statusPublished - 2003 Jun 30
Externally publishedYes


  • HfO
  • Oxidation
  • Plasma
  • RTA
  • Reactive sputtering

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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