TY - JOUR
T1 - Comparison of slicing-induced damage in hexagonal SiC by wire sawing with loose abrasive, wire sawing with fixed abrasive, and electric discharge machining
AU - Ishikawa, Yukari
AU - Yao, Yong Zhao
AU - Sugawara, Yoshihiro
AU - Sato, Koji
AU - Okamoto, Yoshihiro
AU - Hayashi, Noritaka
AU - Dierre, Benjamin
AU - Watanabe, Kentaro
AU - Sekiguchi, Takashi
PY - 2014/7
Y1 - 2014/7
N2 - Crystal damage induced in hexagonal SiC by cutting was characterized by transmission electron microscopy and Raman scattering. Wiresawing with loose abrasive (WSLA) induces stacking faults (SFs), dispersive triangular crystal disordered areas, and dislocation half-loop bundles. Wiresawing with fixed abrasive (WSFA) induces SFs, crystal disordered layers, and dislocation half-loop bundles. Electric discharge machining (EDM) predominantly forms silicon, carbon, and 3C-SiC by 6H-SiC decomposition. The mechanisms inducing crystal damage by slicing were discussed on the basis of characterization results.
AB - Crystal damage induced in hexagonal SiC by cutting was characterized by transmission electron microscopy and Raman scattering. Wiresawing with loose abrasive (WSLA) induces stacking faults (SFs), dispersive triangular crystal disordered areas, and dislocation half-loop bundles. Wiresawing with fixed abrasive (WSFA) induces SFs, crystal disordered layers, and dislocation half-loop bundles. Electric discharge machining (EDM) predominantly forms silicon, carbon, and 3C-SiC by 6H-SiC decomposition. The mechanisms inducing crystal damage by slicing were discussed on the basis of characterization results.
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U2 - 10.7567/JJAP.53.071301
DO - 10.7567/JJAP.53.071301
M3 - Article
AN - SCOPUS:84903639132
VL - 53
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7
M1 - 071301
ER -