Abstract
Crystal damage induced in hexagonal SiC by cutting was characterized by transmission electron microscopy and Raman scattering. Wiresawing with loose abrasive (WSLA) induces stacking faults (SFs), dispersive triangular crystal disordered areas, and dislocation half-loop bundles. Wiresawing with fixed abrasive (WSFA) induces SFs, crystal disordered layers, and dislocation half-loop bundles. Electric discharge machining (EDM) predominantly forms silicon, carbon, and 3C-SiC by 6H-SiC decomposition. The mechanisms inducing crystal damage by slicing were discussed on the basis of characterization results.
| Original language | English |
|---|---|
| Article number | 071301 |
| Journal | Japanese journal of applied physics |
| Volume | 53 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Ishikawa, Y., Yao, Y. Z., Sugawara, Y., Sato, K., Okamoto, Y., Hayashi, N., Dierre, B., Watanabe, K., & Sekiguchi, T. (2014). Comparison of slicing-induced damage in hexagonal SiC by wire sawing with loose abrasive, wire sawing with fixed abrasive, and electric discharge machining. Japanese journal of applied physics, 53(7), [071301]. https://doi.org/10.7567/JJAP.53.071301