Comparison of slicing-induced damage in hexagonal SiC by wire sawing with loose abrasive, wire sawing with fixed abrasive, and electric discharge machining

Yukari Ishikawa, Yong Zhao Yao, Yoshihiro Sugawara, Koji Sato, Yoshihiro Okamoto, Noritaka Hayashi, Benjamin Dierre, Kentaro Watanabe, Takashi Sekiguchi

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Crystal damage induced in hexagonal SiC by cutting was characterized by transmission electron microscopy and Raman scattering. Wiresawing with loose abrasive (WSLA) induces stacking faults (SFs), dispersive triangular crystal disordered areas, and dislocation half-loop bundles. Wiresawing with fixed abrasive (WSFA) induces SFs, crystal disordered layers, and dislocation half-loop bundles. Electric discharge machining (EDM) predominantly forms silicon, carbon, and 3C-SiC by 6H-SiC decomposition. The mechanisms inducing crystal damage by slicing were discussed on the basis of characterization results.

Original languageEnglish
Article number071301
JournalJapanese journal of applied physics
Volume53
Issue number7
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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