Comparison of SAB methods for room temperature bonding of Si wafers

Keigo Oshikawa, Chenxi Wang, Masahisa Fujino, Tadatomo Suga, Kenichi Iguchi, Haruo Nakawaza, Yoshikazu Takahashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Three variations of SAB method are compared for Si-Si direct bonding at room temperature. The bonded interfaces are characterized by amorphous layers depending on the surface activation processes by ion beam or plasma irradiation.

Original languageEnglish
Title of host publicationProceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Number of pages1
DOIs
Publication statusPublished - 2012 Aug 15
Externally publishedYes
Event2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 - Tokyo, Japan
Duration: 2012 May 222012 May 23

Publication series

NameProceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012

Other

Other2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
CountryJapan
CityTokyo
Period12/5/2212/5/23

ASJC Scopus subject areas

  • Computer Graphics and Computer-Aided Design
  • Computer Vision and Pattern Recognition

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  • Cite this

    Oshikawa, K., Wang, C., Fujino, M., Suga, T., Iguchi, K., Nakawaza, H., & Takahashi, Y. (2012). Comparison of SAB methods for room temperature bonding of Si wafers. In Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 [6238066] (Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012). https://doi.org/10.1109/LTB-3D.2012.6238066