We have investigated the mechanism of scanning tunneling microscope (STM) visible light emission from n-type Si(100). The current fluctuation theory that explained the light emission characteristics of the Si-metal-oxide-semiconductor (Si-MOS) tunnel junction is applied to the STM light emission from n-type Si(100). This theory reproduces the observed STM light emission spectra, and predicts that the light emission efficiency from the STM geometry is approximately 1.5×104 times greater than that from the Si-MOS junctions. This prediction is consistent with our experimental result. Experimentally, the light emission intensity from the Si surface under the STM is comparable to that from the Si-MOS junction, although the tunneling current in the STM is 10-3 of the current in the Si-MOS junction. That is, the light emission efficiency from the STM is at least 103 times greater than that from the Si-MOS.
|Number of pages||6|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - 2000 Aug 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)