Comparison of light-emission efficiencies from Si-metal-oxide-semiconductor junctions and from Si in scanning tunneling microscopy

Yoichi Uehara, Masashi Kuwahara, Sukekatsu Ushioda

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4 Citations (Scopus)

Abstract

We have investigated the mechanism of scanning tunneling microscope (STM) visible light emission from n-type Si(100). The current fluctuation theory that explained the light emission characteristics of the Si-metal-oxide-semiconductor (Si-MOS) tunnel junction is applied to the STM light emission from n-type Si(100). This theory reproduces the observed STM light emission spectra, and predicts that the light emission efficiency from the STM geometry is approximately 1.5×104 times greater than that from the Si-MOS junctions. This prediction is consistent with our experimental result. Experimentally, the light emission intensity from the Si surface under the STM is comparable to that from the Si-MOS junction, although the tunneling current in the STM is 10-3 of the current in the Si-MOS junction. That is, the light emission efficiency from the STM is at least 103 times greater than that from the Si-MOS.

Original languageEnglish
Pages (from-to)4904-4909
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number8
Publication statusPublished - 2000 Aug 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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