Comparison of leakage behaviors in p - And n -type metal-oxide- semiconductor capacitors with hafnium silicon oxynitride gate dielectric by electron-beam-induced current

Jun Chen, Takashi Sekiguchi, Naoki Fukata, Masami Takase, Toyohiro Chikyo, Kikuo Yamabe, Ryu Hasunuma, Motoyuki Sato, Yasuo Nara, Keisaku Yamada

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The gate leakage behaviors of p - and n -type metal-oxide-semiconductor (p-nMOS) capacitors with hafnium silicon oxynitride (HfSiON) gate dielectric were microscopically investigated by electron-beam-induced current (EBIC) technique. Carrier separated EBIC measurement has found that in nonstressed samples, hole conduction in pMOS is significantly enhanced by trap-assisted tunneling, while electron conduction in nMOS is independent of traps. After voltage stress, traps are induced in nMOS and enhanced electron conduction.

Original languageEnglish
Article number262103
JournalApplied Physics Letters
Volume92
Issue number26
DOIs
Publication statusPublished - 2008 Jul 11
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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