Comparison of hexagonal ZnS film properties on c- and a-sapphires

Y. Z. Yoo, Toyohiro Chikyo, P. Ahmet, Zheng Wu Jin, M. Kawasaki, H. Koinuma

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Wurtzite ZnS films were epitaxially grown on c- and a-plane sapphire substrates at 800°C by pulsed laser deposition using a KrF excimer laser. Hexagonal phase was distinguished from cubic phase by detailed X-ray diffraction analysis. Unlike a typical epitaxial relationship such as GaN or ZnO on sapphire, the wurtzite ZnS films on c- and a-sapphire showed unique epitaxial relationships of Al2O3 [1 1 2̄ 0]∥W-ZnS [1 1 2̄ 0] and Al2O3 [0 0 0 1]∥W-ZnS [1 0 1̄ 0], respectively. Multi-domains were observed in wurtzite ZnS films on a-sapphire. Both films on sapphire exhibited strong excitonic absorption at room temperature.

Original languageEnglish
Pages (from-to)1594-1598
Number of pages5
JournalJournal of Crystal Growth
Issue number1 4 II
Publication statusPublished - 2002 Jan 1
Externally publishedYes


  • A3. Laser epitaxy
  • B1. Zinc compounds
  • B2. Semiconducting II-VI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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