Comparison of gate sensitivity for spin interference effect between AI 2O3 and SiO2 gate insulators on InGaAs based mesoscopic ring arrays

M. Kohda, J. Takagi, J. Nitta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We demonstrated gate voltage control of spin precession in InGaAs mesoscopic ring arrays based on Rashba spin orbit interaction (SOI). We employed 100 nm ALD AI2O3 and 150 nm sputtered SiO2 gate insulators combined with large and small ring arrays to compare the gate sensitivity for the spin precession. Al'tshuler-Aronov-Spivak (AAS) oscillations were clearly observed and the oscillation phases at B = 0 switched between negative and positive by changing the gate bias voltages Vg. It corresponds to the electrical manifestation of spin rotation due to the Rashba SOI. The spin precession angle of 2π is achieved by changing Vg for 0.6 V in large ring array with AI2O3 gate whereas Vg for 5.4 V in small ring array with SiO2 gate. We can explain enhancement of the gate sensitivity in AI2O3 gate by taking the gate control of Rashba SOI parameter α and the different ring diameter into account.

Original languageEnglish
Title of host publicationECS Transactions - Atomic Layer Deposition Applications 4
Pages39-49
Number of pages11
Edition4
DOIs
Publication statusPublished - 2008 Dec 1
EventAtomic Layer Deposition Applications 4 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 132008 Oct 15

Publication series

NameECS Transactions
Number4
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherAtomic Layer Deposition Applications 4 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1308/10/15

ASJC Scopus subject areas

  • Engineering(all)

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