Comparison of GaN- and ZnSe-based materials for light emitters

Takashi Matsuoka, Akira Ohki, Tetsuichiro Ohno, Yoshihiro Kawaguchi

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

Recent progress in research on GaN- and ZnSe-related materials is remarkable. Based on these results, this paper compares the characteristics of GaN- and ZnSe-based materials from the viewpoint of achieving reliable light emitting devices, in particular laser diodes (LDs) based on experience gained in the development of LDs such as the InGaAsP/InP and GaAs/AlGaAs LDs widely used at present. The relationship between lattice constant and bandgap energy, the dispersion of refractive indices, the equilibrium vapor pressure of elements over materials, and self-diffusion coefficients can be compared. The current status of both materials is reviewed with respect to light emitters. The transport devices are also described, briefly. Finally, future prospects are discussed.

Original languageEnglish
Pages (from-to)727-736
Number of pages10
JournalJournal of Crystal Growth
Volume138
Issue number1-4
DOIs
Publication statusPublished - 1994 Apr 2
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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