Comparison of GaN- and ZnSe-based materials for light emitters

Takashi Matsuoka; Akira Ohki; Tetsuichiro Ohno; Yoshihiro Kawaguchi

doi:10.1016/0022-0248(94)90898-2

Comparison of GaN- and ZnSe-based materials for light emitters

Takashi Matsuoka, Akira Ohki, Tetsuichiro Ohno, Yoshihiro Kawaguchi

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Recent progress in research on GaN- and ZnSe-related materials is remarkable. Based on these results, this paper compares the characteristics of GaN- and ZnSe-based materials from the viewpoint of achieving reliable light emitting devices, in particular laser diodes (LDs) based on experience gained in the development of LDs such as the InGaAsP/InP and GaAs/AlGaAs LDs widely used at present. The relationship between lattice constant and bandgap energy, the dispersion of refractive indices, the equilibrium vapor pressure of elements over materials, and self-diffusion coefficients can be compared. The current status of both materials is reviewed with respect to light emitters. The transport devices are also described, briefly. Finally, future prospects are discussed.

Original language	English
Pages (from-to)	727-736
Number of pages	10
Journal	Journal of Crystal Growth
Volume	138
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(94)90898-2
Publication status	Published - 1994 Apr 2
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/0022-0248(94)90898-2

Fingerprint Dive into the research topics of 'Comparison of GaN- and ZnSe-based materials for light emitters'. Together they form a unique fingerprint.

Cite this

@article{bc402d1406234042be19e46465d8d94a,

title = "Comparison of GaN- and ZnSe-based materials for light emitters",

abstract = "Recent progress in research on GaN- and ZnSe-related materials is remarkable. Based on these results, this paper compares the characteristics of GaN- and ZnSe-based materials from the viewpoint of achieving reliable light emitting devices, in particular laser diodes (LDs) based on experience gained in the development of LDs such as the InGaAsP/InP and GaAs/AlGaAs LDs widely used at present. The relationship between lattice constant and bandgap energy, the dispersion of refractive indices, the equilibrium vapor pressure of elements over materials, and self-diffusion coefficients can be compared. The current status of both materials is reviewed with respect to light emitters. The transport devices are also described, briefly. Finally, future prospects are discussed.",

author = "Takashi Matsuoka and Akira Ohki and Tetsuichiro Ohno and Yoshihiro Kawaguchi",

year = "1994",

month = apr,

day = "2",

doi = "10.1016/0022-0248(94)90898-2",

language = "English",

volume = "138",

pages = "727--736",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Comparison of GaN- and ZnSe-based materials for light emitters

AU - Matsuoka, Takashi

AU - Ohki, Akira

AU - Ohno, Tetsuichiro

AU - Kawaguchi, Yoshihiro

PY - 1994/4/2

Y1 - 1994/4/2

N2 - Recent progress in research on GaN- and ZnSe-related materials is remarkable. Based on these results, this paper compares the characteristics of GaN- and ZnSe-based materials from the viewpoint of achieving reliable light emitting devices, in particular laser diodes (LDs) based on experience gained in the development of LDs such as the InGaAsP/InP and GaAs/AlGaAs LDs widely used at present. The relationship between lattice constant and bandgap energy, the dispersion of refractive indices, the equilibrium vapor pressure of elements over materials, and self-diffusion coefficients can be compared. The current status of both materials is reviewed with respect to light emitters. The transport devices are also described, briefly. Finally, future prospects are discussed.

AB - Recent progress in research on GaN- and ZnSe-related materials is remarkable. Based on these results, this paper compares the characteristics of GaN- and ZnSe-based materials from the viewpoint of achieving reliable light emitting devices, in particular laser diodes (LDs) based on experience gained in the development of LDs such as the InGaAsP/InP and GaAs/AlGaAs LDs widely used at present. The relationship between lattice constant and bandgap energy, the dispersion of refractive indices, the equilibrium vapor pressure of elements over materials, and self-diffusion coefficients can be compared. The current status of both materials is reviewed with respect to light emitters. The transport devices are also described, briefly. Finally, future prospects are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0028760788&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028760788&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(94)90898-2

DO - 10.1016/0022-0248(94)90898-2

M3 - Article

AN - SCOPUS:0028760788

VL - 138

SP - 727

EP - 736

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -

Comparison of GaN- and ZnSe-based materials for light emitters

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this