Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3

Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura

Research output: Contribution to journalArticlepeer-review

Abstract

Characteristics of thin-film transistors (TFTs) with amorphous In2O3 (InO1.2) and carbon-doped In2O3 (InO1.16C0.04) channels by post-metallization annealing (PMA) process were investigated. The InO1.2 TFT changed from metallic to switching behavior after PMA at 200 °C. In contrast, the InO1.16C0.04 TFT exhibited superior properties such as a threshold voltage (Vth) of 3.2 V and a high mobility of 20.4 cm2 V−1 s−1 at PMA 150 °C because of the reduction of excess oxygen vacancies. A large negative Vth shift was observed for the InO1.2 TFT for 10 800 s in N2 under zero bias voltage while there was no Vth change for the InO1.16C0.04 TFT.

Original languageEnglish
Article number030903
JournalJapanese journal of applied physics
Volume60
Issue number3
DOIs
Publication statusPublished - 2021 Mar
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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