Characteristics of thin-film transistors (TFTs) with amorphous In2O3 (InO1.2) and carbon-doped In2O3 (InO1.16C0.04) channels by post-metallization annealing (PMA) process were investigated. The InO1.2 TFT changed from metallic to switching behavior after PMA at 200 °C. In contrast, the InO1.16C0.04 TFT exhibited superior properties such as a threshold voltage (Vth) of 3.2 V and a high mobility of 20.4 cm2 V−1 s−1 at PMA 150 °C because of the reduction of excess oxygen vacancies. A large negative Vth shift was observed for the InO1.2 TFT for 10 800 s in N2 under zero bias voltage while there was no Vth change for the InO1.16C0.04 TFT.
ASJC Scopus subject areas
- Physics and Astronomy(all)