Comparison of Al x Ga1-xN multiple quantum wells designed for 265 and 285 nm deep-ultraviolet LEDs grown on AlN templates having macrosteps

Yosuke Nagasawa, Kazunobu Kojima, Akira Hirano, Masamichi Ipponmatsu, Yoshio Honda, Hiroshi Amano, Isamu Akasaki, Shigefusa F. Chichibu

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4 Citations (Scopus)

Abstract

AlGaN multiple quantum wells (MQWs) targeting 265 and 285 nm deep-ultraviolet LEDs grown on AlN templates with macrosteps were compared. In the cathodoluminescence images of the 285 nm MQW, high-intensity zones were observed along the edgelines of the macrosteps with wavelengths of 290-296 nm and on the terraces with wavelengths of 286-288 nm. Dark spots related to threading dislocations were seen in the entire 285 nm MQW. For 265 nm, high-intensity zones were limited along the edgelines and dark spots showed a low-contrast, which is likely to be caused by nonradiative recombination centers due to point defects.

Original languageEnglish
Article number064009
JournalApplied Physics Express
Volume12
Issue number6
DOIs
Publication statusPublished - 2019 Jun 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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