Comparison between gaas and alxga1-xas quantum wells in the light emission limit

Hidetoshi Iwamura, Tadashi Saku, Yoshiro Hirayama, Hiroshi Okamoto

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9 Citations (Scopus)


Photoluminescence properties were compared between two types of multi-quantum-well (MQW) structures. One of them had a potential well layer composed of binary GaAs, and the other was composed of ternary AlxGa1-xAs. It is shown that the ternary well MQW structure is more favorable with respect both to higher emission energy and to photoluminescence linewidth than the binary well MQW structure.

Original languageEnglish
Pages (from-to)L101-L103
JournalJapanese journal of applied physics
Issue number2
Publication statusPublished - 1985 Feb
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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