Comparative study on effective electron mobility in FinFETs with a (111) channel surface fabricated by wet and dry etching processes

Y. X. Liu, E. Sugimata, M. Masahara, K. Ishii, K. Endo, T. Matsukawa, H. Yamauchi, E. Suzuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The quantitative comparison of the electron mobility (ueff) in the poly-Si gated n-channel multi-FinFETs fabricated by the orientation- dependent wet etching and conventional RIE processes has been carried out. A remarkable increment in Ueff has experimentally been confirmed in the Si-fin channels fabricated by the wet etching instead of the RIE. Therefore, it is concluded that the developed wet etching technique is very attractive for the fabrication process of the high quality and ultra-thin Si-fin channel FinFETs.

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2005
Subtitle of host publication2005 International Microprocesses and Nanotechnology Conference
PublisherIEEE Computer Society
Pages264-265
Number of pages2
ISBN (Print)4990247221, 9784990247225
DOIs
Publication statusPublished - 2005 Jan 1
Externally publishedYes
Event2005 International Microprocesses and Nanotechnology Conference - Tokyo, Japan
Duration: 2005 Oct 252005 Oct 28

Publication series

NameDigest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference
Volume2005

Other

Other2005 International Microprocesses and Nanotechnology Conference
CountryJapan
CityTokyo
Period05/10/2505/10/28

ASJC Scopus subject areas

  • Engineering(all)

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