Comparative study on ALD/CVD-Co(W) films as a single barrier/liner layer for 22-1x nm generation interconnects

Hideharu Shimizu, Henry Wojcik, Kohei Shima, Yoshihiko Kobayashi, Takeshi Momose, Johann W. Bartha, Yukihiro Shimogaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

ALD-Co(W) was found to have a potential to replace the conventional PVD-Ta/TaN bi-layer in further shrinking interconnects as a single-layered barrier/liner material. We could confirm good barrier property of CVD/ALD-Co(W) film by BTS-TVS method after 350°C annealing. ALD-Co(W) showed lower resistivity of 60 μΩ-cm and good adhesion to Cu. Complete trench filling with Co(W) followed by Cu seed deposition was demonstrated. These properties were confirmed to be derived from W stuffing into grain boundaries of oxygen-free ALD-Co(W) films. We would like to suggest ALD-Co(W) as a next-generation barrier/liner layer for future development.

Original languageEnglish
Title of host publication2012 IEEE International Interconnect Technology Conference, IITC 2012
DOIs
Publication statusPublished - 2012 Oct 1
Externally publishedYes
Event2012 IEEE International Interconnect Technology Conference, IITC 2012 - San Jose, CA, United States
Duration: 2012 Jun 42012 Jun 6

Publication series

Name2012 IEEE International Interconnect Technology Conference, IITC 2012

Other

Other2012 IEEE International Interconnect Technology Conference, IITC 2012
CountryUnited States
CitySan Jose, CA
Period12/6/412/6/6

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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